NDT4562
NDT4562 is a silicon avalanche photodiode in a small package, offering high gain, fast response, high operating frequency and high multiplication gain.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Forward Current I_F [MAXIMUM RATINGS；Ta=25°C] | 1 mA |
| Peak Reverse Current I_R [MAXIMUM RATINGS；Ta=25°C] | 0.2 mA |
| Operating Temperature Topr. [MAXIMUM RATINGS；Ta=25°C] | -30~+100 °C |
| Storage Temperature Tstg. [MAXIMUM RATINGS；Ta=25°C] | -40~+100 °C |
| Soldering Temperature Tstg. [MAXIMUM RATINGS; Ta=25°C; Source Symbol Is Tstg., the Same as Storage Temperature; Retained as in Source] | 260 °C |
| Spectral Response Range λ [Electro-optical characteristics；Ta=25°C；M=1] | min:400 nm; max:1000 nm |
| Peak Response Wavelength λ_P [Electro-optical characteristics；Ta=25°C] | typical:760 nm |
| Responsivity Re [Electro-optical characteristics；Ta=25°C；λ=520nm；M=1] | min:0.3 A/W; typical:0.35 A/W |
| Reverse Breakdown Voltage V_BR [Electro-optical characteristics；Ta=25°C；I_R=100μA] | min:60 V; max:100 V |
| Breakdown-Voltage Temperature Coefficient δ [Electro-optical characteristics；Ta=25°C] | typical:0.45 V/°C |
| Dark Current I_D [Electro-optical characteristics；Ta=25°C；M=100] | typical:0.1 nA; max:1 nA |
| Capacitance Ct [Electro-optical characteristics；Ta=25°C；M=100；f=1MHz] | typical:1 pF |
| Amplification Factor M [Electro-optical characteristics；Ta=25°C] | Typ:100 |
| Active Area Diameter [Independent Features / Name-Value Table on PDF Page 1] | 200 μm |
| Quantity per Package [Independent Note on PDF Page 4] | 2000pcs/Bag; 10000pcs/Box |
| Packaging Method [Independent Note on PDF Page 4] | Vacuum, Moisture-Proof, Antistatic Bag; Desiccant in Each Bag |
| Storage Temperature [Before Opening the Bag; Independent CAUTION on Page 5] | 5~30 °C |
| Storage Humidity [Before Opening the Bag; Independent CAUTION on Page 5, Chinese/English Boundaries Retained] | Chinese: RH<60%; English: RH60%Max |
| Storage Time [Before Opening the Bag; Independent CAUTION on Page 5] | Chinese: t<12 Months; English: Time: 12 Months |
| Storage Humidity [After Opening the Bag; For Infrared / Vapor-Phase Reflow Soldering or Similar Processes] | <20 %RH |
| Storage Temperature [Complete Soldering within 168 Hours after Opening the Bag; Independent CAUTION on Page 5] | Chinese: T<30°C; English: Temperature: 30°C Max |
| Storage Humidity [Complete Soldering within 168 Hours after Opening the Bag; Independent CAUTION on Page 5] | Chinese: RH<60%; English: RH60%Max |
| Baking Conditions [If Storage Conditions Were Not Met, Before Resoldering; Baking Also Required When the Humidity Indicator Card Shows >30% after Opening the Bag] | t=12 Hours; T=60°C±3°C; RH<5% |
Applications
Key Features
Datasheet
Supplier Information
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