NPD2216 Dual-Area PD
NPD2216 Clear-Resin Silicon Photodiode,High Speed/Sensitivity. The dual PD comprises two highly sensitive photodiodes, with various active areas and package types available. Its unique arrangement and good photoelectric characteristics support background suppression, ranging, alignment and displacement measurement. A one-dimensional PSD detects the coordinates of a light spot's centroid. High resolution, fast response and simple signal processing suit rapid, precise noncontact and alignment measurements of displacement, distance, angle and other quantities convertible to spot position or movement.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Overall Dimensions [Dual PD, Multi-Zone PD] | 4.0 mm × 3.0 mm × 1.1 mm |
| Working-Area Dimensions [Dual PD, Multi-Zone PD; Original 2- Compound Expression Retained, Not Calculated or Treated as a Range] | 2-0.90×1.60 |
| Power Consumption P_D [Maximum Ratings; Ta=25°C; Photodetector Characteristics of Each Cell] | 150 mW |
| Reverse Voltage V_R [Maximum Ratings; Ta=25°C; Photodetector Characteristics of Each Cell] | 30 V |
| Operating Temperature Topr. [Maximum Ratings; Ta=25°C; Photodetector Characteristics of Each Cell] | -25~+85 °C |
| Storage Temperature Tstg. [Maximum Ratings; Ta=25°C; Photodetector Characteristics of Each Cell] | -40~+100 °C |
| Soldering Temperature Tsol. [Maximum Ratings;Ta=25°C; Photosensitive-Device Characteristics per Cell;2mm from Package Edge, Maximum5 Seconds] | 260 °C |
| Open-Circuit Voltage V_OC [Electro-optical Characteristics;Ta=25°C;Characteristics of Each Photosensitive Cell;E=1000Lux;CIE Standard Illuminant A,Chinese2856K Halogen Lamp/English2856K Tungsten Lamp] | min:0.3 V; typical:0.4 V |
| Short-Circuit Current I_SC [Electro-optical Characteristics;Ta=25°C;Characteristics of Each Photosensitive Cell;E=1000Lux;CIE Standard Illuminant A,Chinese2856K Halogen Lamp/English2856K Tungsten Lamp] | typical:13 μA |
| Dark Current I_D [Electro-optical Characteristics;Ta=25°C;Photosensitive Device per Cell;V_R=10V;E=0mW/cm²] | max:100 nA |
| Reverse Breakdown Voltage V_R [Electro-optical Characteristics;Ta=25°C;Photosensitive Device per Cell;I_R=10μA;E=0mW/cm²] | min:30 V |
| Total Capacitance Ct [Electro-optical Characteristics;Ta=25°C;Photosensitive Device per Cell;V_R=10V;f=1MHZ;E=0mW/cm²] | typical:20 pF |
| Spectral Response λ_0.5 [Electro-optical Characteristics; Ta=25°C; Characteristics of the Photosensitive Device in Each Cell] | min:400 nm; max:1100 nm |
| Peak Wavelength λ_P [Electro-optical Characteristics; Ta=25°C; Characteristics of the Photosensitive Device in Each Cell] | typical:850 nm |
| Quantity per Package [Parameter Image 04 Independent Note] | 1500pcs/Bag |
| Packaging Method [Parameter Image 04 Independent Note] | Vacuum, Moisture-Proof, Antistatic Bag; Desiccant in Each Bag |
| Storage Temperature [Before Opening the Bag; Parameter Image 05 Independent CAUTION] | 5~30 °C |
| Storage Humidity [Before Opening Bag; Parameter Figure 05 Independent CAUTION, Chinese/English Boundary Retained] | Chinese: RH<60%; English: RH60%Max |
| Storage Time [Before Opening the Bag; Parameter Image 05 Independent CAUTION] | Chinese: t<12 Months; English: Time: 12 Months |
| Storage Humidity [After Opening the Bag; For Infrared / Vapor-Phase Reflow Soldering or Similar Processes] | <20 %RH |
| Storage Temperature [Complete Soldering within 168 Hours after Opening the Bag; Parameter Image 05 Independent CAUTION] | Chinese: T<30°C; English: Temperature: 30°C Max |
| Storage Humidity [Complete Soldering within 168 Hours after Opening the Bag; Parameter Image 05 Independent CAUTION] | Chinese: RH<60%; English: RH60%Max |
| Baking Conditions [If Storage Conditions Were Not Met, Before Resoldering; Baking Also Required When the Humidity Indicator Card Shows >30% after Opening the Bag] | t=24 Hours; T=60°C±3°C; RH<5% |
Applications
Key Features
Datasheet
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