NDC4002-F0650
The NDC4002-F0650 is a silicon avalanche photodiode in a ceramic package, featuring high multiplication gain, fast response, and high operating frequency.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Forward Current I_F [MAXIMUM RATINGS；Ta=25°C] | 1 mA |
| Peak Reverse Current I_R [MAXIMUM RATINGS；Ta=25°C] | 0.25 mA |
| Operating Temperature Topr. [MAXIMUM RATINGS；Ta=25°C] | -20~+70 °C |
| Storage Temperature Tstg. [MAXIMUM RATINGS；Ta=25°C] | -40~+100 °C |
| Soldering Temperature Tstg. [MAXIMUM RATINGS; Ta=25°C; Source Symbol Is Tstg., the Same as Storage Temperature; Retained as in Source] | 260 °C |
| Active Area Diameter [Independent Features / Name-Value Table on Page 1] | 200 μm |
| Spectral Response Range λ [Electro-optical characteristics；Ta=25°C；M=1] | min:635 nm; max:665 nm |
| Responsivity Re [Electro-optical characteristics；Ta=25°C；λ=650nm；M=1] | typical:0.3 A/W |
| Reverse Breakdown Voltage V_BR [Electro-optical characteristics；Ta=25°C；I_R=100μA] | min:80 V; max:120 V |
| Breakdown-Voltage Temperature Coefficient δ [Electro-optical characteristics；Ta=25°C] | typical:0.6 V/°C |
| Dark Current I_D [Electro-optical characteristics；Ta=25°C；M=100] | typical:0.05 nA; max:1 nA |
| Response Time ts [Electro-optical characteristics；Ta=25°C；M=100；R_L=50Ω；λ=650nm] | typical:0.1 ns |
| Capacitance C [Electro-optical characteristics；Ta=25°C；M=100；f=1MHz] | typical:1.2 pF |
| Cutoff Frequency f_C [Electro-optical characteristics；Ta=25°C；M=100；R_L=50Ω；λ=650nm；-3dB] | typical:1.5 GHz |
| Amplification Factor M [Electro-optical characteristics；Ta=25°C] | Typ:100 |
Applications
Key Features
Datasheet
Supplier Information
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