NDW4001
The NDW4001 is a silicon avalanche photodiode with high operation frequency and high multiplication gain. High-Gain APD for Weak Light,Handheld/Scope Ranging,LiDAR,Medical Analysis;Precise Cost-Effective Molded Package without Filter;NBTech Co-Packable/Arrayable Chips,Developing Array/Quadrant/Special Shapes.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Forward Current I_F [MAXIMUM RATINGS；Ta=25°C] | 1 mA |
| Peak Reverse Current I_R [MAXIMUM RATINGS；Ta=25°C] | 0.25 mA |
| Operating Temperature / Junction Temperature T_J [MAXIMUM RATINGS; Ta=25°C; Chinese Operating Temperature/English Junction Temperature Heading Difference Retained] | 150 °C |
| Chip size [Independent Technical Name/Value Table on Page 1] | 550 μm × 550 μm |
| Chip thickness [Independent Technical Name/Value Table on Page 1] | 250 μm |
| Passivation [Independent Technical Name/Value Table on Page 1] | Silicon Nitride |
| Top metal [Independent Technical Name/Value Table on Page 1] | AL |
| Bottom metal [Independent Technical Name/Value Table on Page 1] | AgNi |
| Bonding pad (Top) [Independent Technical Name/Value Table on Page 1; Top] | CathodeΦ100μm |
| Bonding pad (Bottom) [Independent Technical Name/Value Table on Page 1; Bottom] | Anode |
| Active Area Diameter [Independent Features / Name-Value Table on Page 1] | 120 μm |
| Spectral Response Range λ [Electro-optical characteristics；Ta=25°C；M=1] | min:400 nm; max:1050 nm |
| Peak Response Wavelength λ_P [Electro-optical characteristics；Ta=25°C] | typical:800 nm |
| Responsivity Re [Electro-optical characteristics; Ta=25°C; λ=800 (no unit specified in the source); M=1] | typical:0.45 A/W |
| Reverse Breakdown Voltage V_BR [Electro-optical characteristics；Ta=25°C；I_R=100μA] | min:80 V; max:120 V |
| Breakdown-Voltage Temperature Coefficient δ [Electro-optical characteristics；Ta=25°C] | typical:0.6 V/°C |
| Dark Current I_D [Electro-optical characteristics；Ta=25°C；M=100] | typical:0.05 nA; max:1 nA |
| Response Time ts [Electro-optical characteristics；Ta=25°C；M=100；R_L=50Ω；λ=800nm] | typical:0.1 ns |
| Capacitance C [Electro-optical characteristics；Ta=25°C；M=100；f=1MHz] | typical:1 pF |
| Cutoff Frequency f_C [Electro-optical characteristics；Ta=25°C；M=100；R_L=50Ω；λ=800nm；-3dB] | typical:2 GHz |
| Amplification Factor M [Electro-optical characteristics；Ta=25°C] | Typ:100 |
| Chip Dimensions [APD Chip; Parameter Image 04 Independent Selection Table] | 0.55 mm × 0.55 mm |
| Photosensitive Region [APD Chip; Parameter Image 04 Independent Selection Table] | Φ120 |
| Reverse Breakdown Voltage V_BR [APD Chip; Parameter Image 04 Independent Selection Table] | 80~120 V |
| Photosensitive Wavelength [APD Chip; Parameter Image 04 Independent Selection Table; Parenthesized Wavelength Has No Original Explanation and Is Not Assumed to Be a Peak] | 400~1050nm（800nm） |
Applications
Key Features
Datasheet
Supplier Information
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