NPSD2190-CF (Two-Dimensional PSD)
NPSD2190 Surface-Mount PD,Special Structure Measures Spot-Centroid XY,High Sensitivity/Linearity/Consistency,9×9mm Active;NPSD2190-CF Ceramic+Glass,NPSD2190 Ceramic+Coating.
Specification Snapshot
Photosensitive Region [Reference; Independent Features on Page 1]
9.0 mm × 9.0 mm
Operating Temperature Topr. [Reference;MAXIMUM RATINGS;Ta=25°C]
-20~60 °C
Storage Temperature Tstg. [Reference;MAXIMUM RATINGS;Ta=25°C]
-20~80 °C
Dark Current I_D [Reference;Electro-optical characteristics;Ta=25°C;Ee=0mW/cm²;V_R=5V]
max:50 nA
Capacitance Ct [Reference;Electro-optical characteristics;Ta=25°C;E=0mW/cm²;V_R=5V;f=10KHz]
typical:750 pF
Sensing Wavelength Range λ_0.5 [Reference;Electro-optical characteristics;Ta=25°C]
min:400 nm; max:1100 nm
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Overview
NPSD2190 Surface-Mount PD,Special Structure Measures Spot-Centroid XY,High Sensitivity/Linearity/Consistency,9×9mm Active;NPSD2190-CF Ceramic+Glass,NPSD2190 Ceramic+Coating.
Specifications
| Parameter | Value |
|---|---|
| Photosensitive Region [Reference; Independent Features on Page 1] | 9.0 mm × 9.0 mm |
| Reverse Voltage V_R [Reference;MAXIMUM RATINGS;Ta=25°C] | 20 V |
| Operating Temperature Topr. [Reference;MAXIMUM RATINGS;Ta=25°C] | -20~60 °C |
| Storage Temperature Tstg. [Reference;MAXIMUM RATINGS;Ta=25°C] | -20~80 °C |
| Soldering Temperature Tsol. [Reference;MAXIMUM RATINGS;Ta=25°C] | 260(within 5 seconds) |
| Dark Current I_D [Reference;Electro-optical characteristics;Ta=25°C;Ee=0mW/cm²;V_R=5V] | max:50 nA |
| Interelectrode Resistance Rie [Reference;Electro-optical characteristics;Ta=25°C;Vb=0.1V] | min:2 kΩ; max:15 kΩ |
| Capacitance Ct [Reference;Electro-optical characteristics;Ta=25°C;E=0mW/cm²;V_R=5V;f=10KHz] | typical:750 pF |
| Sensing Wavelength Range λ_0.5 [Reference;Electro-optical characteristics;Ta=25°C] | min:400 nm; max:1100 nm |
| Peak Sensing Wavelength λ_P [Reference;Electro-optical characteristics;Ta=25°C] | typical:850 nm |
Applications
Light Spot Detection; Various Types of Position Detection
Key Features
Ceramic Package;Excellent Position Detectability;Photosensitive Area9.0×9.0mm
Datasheet
Product Datasheet
PDF
Supplier Information
Shanghai Enbi Technology Co., Ltd., founded in 2016, focuses on optoelectronic technology R&D and production. Based on optoelectronic semiconductor discrete devices, it integrates optics, MEMS, electronics, microelectronics, semiconductor optoelectronic IC technologies, covering components, optoelectronic ICs, sensor modules, with full capability from chip design to module mass production, holding independent IP and unique testing systems. The company has an excellent management team and skilled staff, rich industry experience, strong R&D, efficient mass production and strict quality control, providing high-performance, reliable, cost-effective products; for special applications, we offer optimal optoelectronic solutions and custom products. Since its establishment, the company insists on independent innovation, quality first, continuously launching innovative products widely used in industrial equipment, automotive electronics, laser ranging, healthcare, instrumentation, security monitoring, smart home, etc., with performance replacing high-end foreign brands. Enbi Technology actively deploys in IoT, intelligent society, AI, driving industry upgrades, aiming to become a high-end optoelectronic brand.
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