NPSD1046H (One-Dimensional PSD)
NPSD1046/NPSD1046H One-Dimensional Position-Sensitive Detector Locates Spots on Photosensitive Chip.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Reverse Voltage V_R [MAXIMUM RATINGS; Ta=25°C; Photodetector Characteristics of Each Cell] | 30 V |
| Power Consumption P_D [MAXIMUM RATINGS; Ta=25°C; Photodetector Characteristics of Each Cell] | 30 mW |
| Operating Temperature Topr. [MAXIMUM RATINGS; Ta=25°C; Photodetector Characteristics of Each Cell] | -20~85 °C |
| Storage Temperature Tstg. [MAXIMUM RATINGS; Ta=25°C; Photodetector Characteristics of Each Cell] | -30~100 °C |
| Soldering Temperature Tsol. [MAXIMUM RATINGS; Ta=25°C; Photodetector Characteristics of Each Cell; No More Than 5 Seconds at Solder Pads] | 260 °C |
| Forward Voltage Drop V_F [Electro-optical characteristics；Ta=25°C；I_F=10mA] | typical:0.6 V; max:0.7 V |
| Photocurrent I_L [Electro-optical characteristics；Ta=25°C；E_V=1000Lux；V_CC=5V；I_L=I_La+I_Lb] | min:5 μA; max:10 μA |
| Dark Current I_D [Electro-optical characteristics；Ta=25°C；V_R=5V] | max:100 nA |
| Resistance R [Electro-optical characteristics；Ta=25°C；V_R=5V；Between Anode a and Anode b] | typical:280 KΩ |
| Capacitance Ct [Electro-optical characteristics；Ta=25°C；V_R=1V；f=1MHz] | typical:20 pF |
| Spectral Response λ [Electro-optical characteristics；Ta=25°C] | min:400 nm; max:1050 nm |
| Effective Area SA [Electro-optical characteristics; Ta=25°C; Three Source Statistical Columns Merged; Compound Values Retained without Calculation] | 4.6 mm² × 0.8 mm² |
Applications
Key Features
Datasheet
Supplier Information
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