NPSD2190 (Two-Dimensional PSD)
NPSD2190 Surface-Mount PD,Special Structure Measures Spot-Centroid XY,High Sensitivity/Linearity/Consistency,9×9mm Active;NPSD2190-CF Ceramic+Glass,NPSD2190 Ceramic+Coating. A position-sensitive detector (PSD) is a semiconductor device using the lateral photoelectric effect to determine a light spot's centroid coordinates. High resolution, fast response and simple processing suit precise, rapid noncontact and alignment measurements of displacement, distance, angle and other quantities convertible to spot position. Uses include inline workpiece displacement/dimensions/surface-state inspection, vibration, eccentricity, gaps and stroke, 3D spatial pose detection and robot ranging, described as replacing ultrasonic vision sensors.
Overview
Specifications
| Parameter | Value |
|---|---|
| Photosensitive Region [Page 1 Independent Feature Text] | 9.0 mm × 9.0 mm |
| Reverse Voltage V_R [MAXIMUM RATINGS;Ta=25°C] | 20 V |
| Operating Temperature Topr. [MAXIMUM RATINGS;Ta=25°C] | -20~60 °C |
| Storage Temperature Tstg. [MAXIMUM RATINGS;Ta=25°C] | -20~80 °C |
| Soldering Temperature Tsol. [MAXIMUM RATINGS;Ta=25°C] | 260(within 5 seconds) |
| Dark Current I_D [Electro-optical characteristics;Ta=25°C;Ee=0mW/cm²;V_R=5V] | max:50 nA |
| Interelectrode Resistance Rie [Electro-optical characteristics;Ta=25°C;Vb=0.1V] | min:2 kΩ; max:15 kΩ |
| Capacitance Ct [Electro-optical characteristics;Ta=25°C;Ee=0mW/cm²;V_R=5V;f=10KHz] | typical:750 pF |
| Sensing Wavelength Range λ_0.5 [Electro-optical characteristics;Ta=25°C] | min:400 nm; max:1100 nm |
| Peak Sensing Wavelength λ_P [Electro-optical characteristics;Ta=25°C] | typical:850 nm |
| Effective Photosensitive Region | 9 mm × 9 mm |
| Photosensitive Wavelength | 320 to 1100 |
| Peak Wavelength | 960 nm |
| Dark Current | <50 nA |
| Junction Capacitance | <500 pF |
| Measurement Accuracy | 0.5 μm |
Applications
Key Features
Datasheet
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