InSiTeᴈ
InSiTeᴈ is a synthetic layered semiconductor belonging to the thermoelectric-material category. It has a trigonal crystal structure, with chemical bonds within layers and weak van der Waals forces between layers, making exfoliation into two-dimensional sheets easy. As a new member of the 2D-material family, InSiTeᴈ shows great potential for high-speed broadband photodetection. Detectors made from it can respond on the nanosecond scale and cover ultraviolet through near-infrared wavelengths.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Chemical Formula | Typ: InSiTe₃ |
| Molecular Weight | typical:525.7035 g/mol |
| Crystal Structure | Typ: Trigonal Crystal System, Space Group P-31m |
| Unit-Cell Parameters | Typ: a=b=c=0.70411(6)nm; α=β=90°，γ=120° |
| Appearance | Typ: Silver-Gray to Dark-Gray Crystals or Powder |
| Crystal Dimensions | typical:Common Sizes >10mm²; >25mm², >100mm² or Custom Also Available |
| Density | typical:5.227g/cm³ |
| Bandgap | typical:0.8eV (Bulk Material); 1.30eV in Monolayer |
| Ease of Cleaving | Typ: Easy |
| Stability | Typ: General; Store away from Water and Oxygen |
| Storage Conditions | typical:Generally Store at -20°C Protected from Light |
| Purity | typical:Usually High Purity 99.999% (5N) to 99.9999% (6N) |
| Preparation Method | Typ: Vertical Bridgman Method |
| Characterization Method | Typ: Raman Spectroscopy, X-Ray Diffraction (XRD), Transmission Electron Microscopy (TEM), etc. |
Applications
Datasheet
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