Semiconductor Coating
Vacuum semiconductor coating is indispensable for both active and passive electronic devices. As the technology advances, precise control of film properties is becoming increasingly important for semiconductor companies. Its role is especially evident in development and research involving large-scale integrated circuits, magnetoelectric conversion devices and light-emitting devices. Vacuum semiconductor coating plays an important part in these applications.
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Coated Component
Material-based Production Equipment
Fuzhouzhiyi
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Electro-Hydraulic Synchronous CNC Press Brake Machine 80T2500
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Bending Capacity: 800 kN Bending Length: 2500 mm Distance Between Columns: 2000 mm
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Electro-Hydraulic Synchronous CNC Press Brake Machine 110T2500
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Bending Capacity: 1100 kN Bending Length: 2500 mm Distance Between Columns: 2000 mm
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Electro-Hydraulic Synchronous CNC Press Brake Machine 110T4100
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Wafer Bonding
Material-based Production Equipment
Jmwafer
晶沐光电 combines wafer grinding/polishing/thinning and laser processing to provide homogeneous/heterogeneous, permanent/temporary wafer bonding. High vacuum sealing, heat/pressure and surface activation create reliable interfaces for3D integration, advanced packaging, MEMS, power, RF and optoelectronic devices, including custom small batches for institutes. Referenced processes/equipment include single-wafer cleaning, class100 cleanroom bonding and KSB-H1000. Permanent bonding irreversibly joins wafers/chips into strong, hermetic, reliable structures. Direct bonding uses ultracleaning, plasma activation and CMP, room-temperature van der Waals prebonding and annealed Si-O-Si covalent bonds: no interlayer, high strength/hermeticity/insulation, void-free/low-stress interfaces for Si/Si, Si/SiO2 and Si/SOI. Anodic bonding uses heat/high electric field for silicon–glass chemical bonds, near-bulk strength, low leak rate and stable sealed cavities, such as Si/borosilicate. Eutectic bonding melts/diffuses Au-Sn, Cu-Sn, In or Au-Si interlayers, yielding low-temperature, conductive, thermally conductive, reliable bonds with broad process windows for Cu/Au/Sn-coated wafers. Thermocompression uses heat/precise pressure for solder-free metal-atom diffusion, high interconnect density/low interface resistance, and direct bonding of Si, metal-coated, compound-semiconductor, sapphire, glass, SiC or ceramic wafers. Hybrid bonding simultaneously joins copper/dielectric for integrated mechanical/electrical submicron-pitch connections, high bandwidth, low latency/loss and HBM/AI stacking in3D NAND, HBM, AI processors, high-end Chiplets and VLSI wafers. Examples are sapphire/Si, SiO2/sapphire and GaAs/Si. Temporary bonding glues a wafer/chip to a carrier for backside processing then gentle release. Thermal-slide bonding softens thermoplastics, PPC or polyimides with heat, hardens on cooling and reheats/slides for release; it resists heat/chemicals for Si thinning, TSV and advanced packaging, but needs heating and may leave adhesive. UV release cures for strength then shortwave UV degrades/debonds UV-release adhesive/double-sided tape: gentle room-temperature release for heat-sensitive MEMS, CIS, compound and ultrathin wafers, but needs a transparent carrier and has moderate heat resistance. Laser release uses transparent carriers and an absorbing layer to decompose/release adhesive without contact; laser-responsive coating plus bonding adhesive gives stress-free, residue-free, precise release for large ultrathin3D IC/HBM/Chiplet/advanced-packaging wafers, at high equipment/material cost. Low-melting In, SnBi or AuSn alloys bond molten and remelt for release; high heat tolerance/conductivity and acid/alkali resistance suit SiC/GaN power devices/high-temperature processes, but metal residue is difficult to clean and processing is complex. Bondable materials include Si, SiC, GaN, sapphire, GaAs, InP, quartz/borosilicate glass, alumina/aluminum-nitride ceramics, diamond, bonded composites, SOI, lithium tantalate/niobate and coated wafers.
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