IBF750 Ion Beam Polishing Machine
Polishing Principle: Under Vacuum, Inert Gases Such as Argon (Ar), Krypton (Kr) and Xenon (Xe) Are Ionized to Produce Energetic Ion Beams That Bombard the Workpiece Surface for Deterministic Atomic-Scale Material Removal.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Equipment Volume | Footprint 3.5m×4m×3.8m |
| Motion System | Vertical Layout, Integrated Multi-Axis System Design |
| X/Y/Z-Axis Effective Travel | 1000mm/750mm/300mm |
| A/B-Axis Effective Travel | Auxiliary Chamber Transfer Axis Travel 300mm |
| Ion Source | Can Be Equipped with a Fully Independently Controllable Domestic Ion Source for a More Stable, Extremely Small Beam Diameter |
| Workpiece Size | 1000 mm × 600 mm × 300 mm |
| Vacuum Establishment Time | Main Vacuum Chamber 90 Minutes; Auxiliary Vacuum Chamber 15 Minutes |
| Workpiece Types and Materials | Wide Range of Machinable Materials: Aluminum, Glass-Ceramic, ULE, Fused Silica, BK7, K9, Sapphire, Sic, Single-Crystal Silicon, Germanium and Other Optical Materials. |
| Machining Accuracy | Both Surface Figure RMS and Surface Roughness Can Achieve Subnanometer Precision |
Key Features
Datasheet
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