650nm2.5mW Dot Laser Semiconductor Laser JAP6505-110
650nm2.5mW dot laser for alignment. Mechanical dimensions are given in mm.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Housing size | Φ4 mm × 7.4 mm |
| Lens | φ3/ Acrylic |
| Circuit Board Size [TC=25℃] | φ3.9mm |
| Circuit Board [TC=25℃] | 3-5V/APC Circuit Board |
| Product Material | Copper H59 |
| Wire [TC=25℃] | 28# Red and Black PVC lead 110mm |
| Product Net Weight [TC=25℃] | 0.65g |
| Optical Power Output Po [TC=25℃; 3-5V Power Supply] | min:2.5 mW; max:3.5 mW |
| Working current Iop [TC=25℃] | typical:25 mA; max:35 mA |
| Operating Voltage Vop [TC=25℃] | min:3 V; typical:3.5 V; max:5 V |
| Laser Wavelength λp [TC=25℃] | min:640 nm; typical:650 nm; max:660 nm |
| Electrical Power Wl [TC=25℃] | min:0.075 W; typical:0.087 W; max:0.175 W |
| Laser Beam Mode [TC=25℃] | Dot Pattern |
| Working Mode [TC=25℃] | continuous |
| Spot Size [TC=25℃; distance 150mm] | <1 mm |
| Working Temperature [TC=25℃] | -10℃ To 40℃ |
| Storage Temperature [TC=25℃] | -40℃ To 85℃ |
| Operating Time [TC=25℃] | 10000H |
| Housing Electrical Polarity [TC=25℃] | Positive Polarity |
Datasheet
Supplier Information
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