488nm50mw Laser Diode GH04850B2G
The GH04850B2G incorporates an InAlGaN multiple quantum well cyan laser diode operating in TE mode.
Specification Snapshot
Storage temperature Tstg [Absolute Maximum Ratings]
-40~+85 °C
Threshold current Ith [Initial value; Continuous Wave Operation; Tc=25°C]
typical:40 mA; max:60 mA
Operating current Iop [Initial value; Continuous Wave Operation; Tc=25°C; Po=50mW]
typical:105 mA; max:135 mA
Operating voltage Vop [Initial value; Continuous Wave Operation; Tc=25°C; Po=50mW]
typical:6 V; max:7.5 V
Wavelength λp [Initial value; Continuous Wave Operation; Tc=25°C; Po=50mW]
min:480 nm; typical:487 nm; max:495 nm
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Overview
The GH04850B2G incorporates an InAlGaN multiple quantum well cyan laser diode operating in TE mode.
Specifications
| Parameter | Value |
|---|---|
| Optical power output CW Po [Absolute Maximum Ratings; Tc=25°C] | 55 mW |
| Reverse voltage Vrl [Absolute Maximum Ratings; Tc=25°C] | 2 V |
| Operating temperature Case temperature Top(c) [Absolute Maximum Ratings] | -10~+60 °C |
| Storage temperature Tstg [Absolute Maximum Ratings] | -40~+85 °C |
| Soldering temperature Tsld [Absolute Maximum Ratings; soldering iron tip temperature; iron power20W; Soldering position1.6mm apart from bottom edge of case; Immersion time≤3s] | 350 °C |
| Threshold current Ith [Initial value; Continuous Wave Operation; Tc=25°C] | typical:40 mA; max:60 mA |
| Operating current Iop [Initial value; Continuous Wave Operation; Tc=25°C; Po=50mW] | typical:105 mA; max:135 mA |
| Operating voltage Vop [Initial value; Continuous Wave Operation; Tc=25°C; Po=50mW] | typical:6 V; max:7.5 V |
| Wavelength λp [Initial value; Continuous Wave Operation; Tc=25°C; Po=50mW] | min:480 nm; typical:487 nm; max:495 nm |
| Half Intensity Angle Parallel θ// [Initial value; Continuous Wave Operation; Tc=25°C; Po=50mW; FWHM; Parallel to junction planeX-Z] | min:6 °; typical:8 °; max:10 ° |
| Half Intensity Angle Perpendicular θ⊥ [Initial value; Continuous Wave Operation; Tc=25°C; Po=50mW; FWHM; Perpendicular to junction planeY-Z] | min:20 °; typical:23 °; max:26 ° |
| Ripple | max:30 % |
| Misalignment angle Parallel Δθ// [Initial value; Continuous Wave Operation; Tc=25°C; Po=50mW; Parallel to junction planeX-Z] | min:-3 °; typical:0 °; max:3 ° |
| Misalignment angle Perpendicular Δθ⊥ [Initial value; Continuous Wave Operation; Tc=25°C; Po=50mW; Perpendicular to junction planeY-Z] | min:-3 °; typical:0 °; max:3 ° |
| Differential efficiency ηd [Initial value; Continuous Wave Operation; Tc=25°C; 40mW/[I(50mW)−I(10mW)]] | min:0.5 mW/mA; typical:0.8 mW/mA |
| Kink K-LI [Initial value; Continuous Wave Operation; Tc=25°C; P1=11mW; P2=33mW; P3=55mW; K-LI=(P4−P3)/P3] | min:-10 %; max:10 % |
Datasheet
Product Datasheet
PDF
Supplier Information
Dongguan BU-Laser Co., Ltd. was established in September 2010. It is a high-tech enterprise integrating R&D, production and sales of semiconductor lasers. With the business philosophy of "innovation, effectiveness, quality and service" and the purpose of winning the market together with customers, let technology change the way of life!
The company owns its own brands "LANJI" and "VIAN", and has won the reputation of China's honest semiconductor laser supplier, with multiple patent certifications.
We are a laser high-tech company located in Dongguan, with more than 20 production lines and a daily production capacity of 50,000 pieces. There are 68 automated equipment and 200 employees. We can design customized lasers according to customer requirements. A professional technical team and efficient after-sales service bring the best service to every customer and escort you.
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