642nm150mw Laser Diode GH0641FA2G
The 642nm laser diode emits at 642nm with a power of 150mW. It is a semiconductor blue laser. Applications include fluorescent labeling, biomedicine and microscopic imaging. 1. Domestic brands: Huaguang and Huashang. 2. Sony.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Optical power output Po [Absolute Maximum Ratings; Tc=25℃] | 155 mW |
| Optical power output Po [Absolute Maximum Ratings; Tc=40℃] | 130 mW |
| Reverse voltage Vrl [Absolute Maximum Ratings; Tc=25℃] | 2 V |
| Operating temperature Top(c) [Absolute Maximum Ratings; Case temperature] | -10~+60 ℃ |
| Storage temperature Tstg [Absolute Maximum Ratings] | -40~+85 ℃ |
| Soldering Temperature Tsld [Absolute Maximum Ratings; Soldering iron tip temperature; position1.6mm apart from bottom edge of case; Immersion time≤3s] | 350 ℃ |
| Threshold current Ith [Tc=25℃; Initial value; Continuous Wave Operation] | typical:60 mA |
| Operating current Iop [Tc=25℃; Initial value; Continuous Wave Operation; Po=150mW] | typical:190 mA |
| Operating voltage Vop [Tc=25℃; Initial value; Continuous Wave Operation; Po=150mW] | typical:2.6 V; max:3.0 V |
| Wavelength λp [Tc=25℃; Initial value; Continuous Wave Operation; Po=150mW] | min:637 nm; typical:642 nm; max:647 nm |
| Half intensity angle Parallel θ// [Tc=25℃; Initial value; Continuous Wave Operation; Po=150mW; Angle of50% peak intensity; Full angle at half-maximum] | min:4 °; typical:8 °; max:12 ° |
| Half intensity angle Perpendicular θ⊥ [Tc=25℃; Initial value; Continuous Wave Operation; Po=150mW; Angle of50% peak intensity; Full angle at half-maximum] | min:10 °; typical:15 °; max:20 ° |
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Key Features
Datasheet
Supplier Information
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