850nm700mw Laser Diode GH0852WA2G
This product is equipped with a GaAlAs multiple quantum well infrared laser diode. Oscillating transverse mode of this model is TE.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Optical power output (CW) Po [Absolute Maximum Ratings; Tc=25℃; Case temperature] | 700 mW |
| Optical power output (Pulse) Pp [Absolute Maximum Ratings; Tc=25℃; Case temperature; Pulse Width1μs; Duty10%] | 2,000 |
| Reverse voltage Vrl [Absolute Maximum Ratings; Tc=25℃; Case temperature] | 2 V |
| Operating temperature (Case temperature) Top(c) [Absolute Maximum Ratings; Tc=25℃] | -10 ～ +70 ℃ |
| Storage temperature Tstg [Absolute Maximum Ratings; Tc=25℃; Case temperature] | -40 ～ +85 ℃ |
| Soldering temperature Tsld [Absolute Maximum Ratings; Tc=25℃; Case temperature; soldering iron tip temperature; Soldering position1.6mm apart from bottom edge of the case; Immersion time≤3s; iron power20W] | 350 ℃ |
| Threshold current Ith [Tc=25℃; Initial value; Continuous Wave Operation] | typical:250 mA |
| Operating current Iop [Tc=25℃; Initial value; Continuous Wave Operation; Po=700mW] | typical:870 mA |
| Operating voltage Vop [Tc=25℃; Initial value; Continuous Wave Operation; Po=700mW] | typical:2 V |
| Wavelength λp [Tc=25℃; Initial value; Continuous Wave Operation; Po=700mW] | min:840 nm; typical:850 nm; max:860 nm |
| 1/e² Intensity Angle(Parallel) θ∥(1/e²) [Tc=25℃; Initial value; Continuous Wave Operation; Po=700mW; Full angle of 13.5%(≒1/e²) peak intensity; Parallel to the junction plane(X-Z plane)] | typical:13.5 ° |
| 1/e² Intensity Angle(Perpendicular) θ⊥(1/e²) [Tc=25℃; Initial value; Continuous Wave Operation; Po=700mW; Full angle of 13.5%(≒1/e²) peak intensity; Perpendicular to the junction plane(Y-Z plane)] | typical:40 ° |
| Misalignment angle (Parallel) Δθ∥(1/e²) [Tc=25℃; Initial value; Continuous Wave Operation; Po=700mW; Parallel to the junction plane(X-Z plane)] | min:-5 °; max:5 ° |
| Misalignment angle (Perpendicular) Δθ⊥(1/e²) [Tc=25℃; Initial value; Continuous Wave Operation; Po=700mW; Perpendicular to the junction plane(Y-Z plane)] | min:-5 °; max:5 ° |
| Differential efficiency ηd [Tc=25℃; Initial value; Continuous Wave Operation; 600mW/[I(700mW)-I(100mW)]] | min:0.7 mW/mA; typical:1.0 mW/mA; max:1.3 mW/mA |
| Kink K-LI [Tc=25℃; Initial value; Continuous Wave Operation; P1=140mW, P2=420mW P3=700mW; K-LI=(P4-P3)/P3] | min:-10 %; max:10 % |
Datasheet
Supplier Information
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