808nm500mw Laser Diode AL0808F500T5-XXXX

808nm500mw Laser Diode AL0808F500T5-XXXX

Supplier
Bu-laser
Part Number
AL0808F500T5-XXXX
Category
Laser Diodes
Origin
China

The 808nm laser diode is widely used in aesthetic medicine, including laser hair removal and treatment of skin and vascular conditions. Its infrared wavelength interacts with human tissue, where light can be absorbed and converted into heat. 1. Domestic brands: Huaguang and Huashang. 2. Sony. 3. Sharp.

Specification Snapshot
Operating Temperature T op [Absolute Maximum Ratings; T=25℃; -10(FW)/10(NGC)]
min:10/-10; max:30 ℃
Storage Temperature T stg [Absolute Maximum Ratings; T=25℃; -10(FW)/10(NGC)]
min:10/-10; max:85 ℃
Optical output power Po [T=25℃; Iop=650mA]
min:500 mW
Center wavelength λc [T=25℃; Iop=570mA]
min:805 nm; typical:808 nm; max:811 nm
Spectral width Δλ [T=25℃; FWHM, Iop=570mA]
max:3.5 nm
Threshold current I th [T=25℃]
typical:120 mA; max:150 mA
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Overview

The 808nm laser diode is widely used in aesthetic medicine, including laser hair removal and treatment of skin and vascular conditions. Its infrared wavelength interacts with human tissue, where light can be absorbed and converted into heat. 1. Domestic brands: Huaguang and Huashang. 2. Sony. 3. Sharp.

Specifications

ParameterValue
Reverse Voltage Vr [Absolute Maximum Ratings; T=25℃]max:2 V
Operating Temperature T op [Absolute Maximum Ratings; T=25℃; -10(FW)/10(NGC)]min:10/-10; max:30 ℃
Storage Temperature T stg [Absolute Maximum Ratings; T=25℃; -10(FW)/10(NGC)]min:10/-10; max:85 ℃
Solder Reflow Temperature S temp [Absolute Maximum Ratings; T=25℃; 10 seconds max]max:260 ℃
Optical output power Po [T=25℃; Iop=650mA]min:500 mW
Center wavelength λc [T=25℃; Iop=570mA]min:805 nm; typical:808 nm; max:811 nm
Spectral width Δλ [T=25℃; FWHM, Iop=570mA]max:3.5 nm
Threshold current I th [T=25℃]typical:120 mA; max:150 mA
Operating current I op [T=25℃; Po=500mW]typical:570 mA; max:650 mA
Operating voltage V f [T=25℃; Po=500mW]typical:1.7 V; max:2 V
Slope Efficiency η [T=25℃]typical:1 W/A
Monitor current I m [T=25℃; Po=500mW]typical:500 uA
Beam divergence θ⊥×θ∥ [T=25℃; FWHM]typical:40 º × 12 º
Wavelength temperature coefficient dλ/dT [T=25℃]typical:0.3 nm/℃
Emitting area [T=25℃]50 μm × 1 μm
Polarization [T=25℃]TE

Key Features

Output power500mW Efficient quantum well structure Lower threshold current Center Wavelength808nm PackageTO-5(Φ9mm)

Datasheet

Product Datasheet
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Supplier Information

Bu
Bu-laser
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Dongguan BU-Laser Co., Ltd. was established in September 2010. It is a high-tech enterprise integrating R&D, production and sales of semiconductor lasers. With the business philosophy of "innovation, effectiveness, quality and service" and the purpose of winning the market together with customers, let technology change the way of life! The company owns its own brands "LANJI" and "VIAN", and has won the reputation of China's honest semiconductor laser supplier, with multiple patent certifications. We are a laser high-tech company located in Dongguan, with more than 20 production lines and a daily production capacity of 50,000 pieces. There are 68 automated equipment and 200 employees. We can design customized lasers according to customer requirements. A professional technical team and efficient after-sales service bring the best service to every customer and escort you.

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808nm500mw Laser Diode AL0808F500T5-XXXX
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