808nm200mw Laser Diode QL80R4S-C

808nm200mw Laser Diode QL80R4S-C

Supplier
Bu-laser
Part Number
QL80R4S-C
Category
Laser Diodes
Origin
China

QL80R4S-A/B/C/D/E-Z5 is a MOCVD grown808nm band laser diode with quantum well structure. Its typical light output power is200mW for optoelectronic devices such as solid state laser pumping and medical use.

Specification Snapshot
Optical Output Power P [Absolute Maximum Rating; Tc=25°C]
200 mW
Operating Temperature Topr [Absolute Maximum Rating; Tc=25°C]
−10 ~ +40
Storage Temperature Tstg [Absolute Maximum Rating; Tc=25°C]
−40 ~ +85
Optical Output Power Po [Tc=25°C; Initial values; QSI measuring apparatus]
typical:200 mW
Threshold Current Ith [Tc=25°C; Initial values; QSI measuring apparatus]
typical:55 mA; max:80 mA
Operating Current Iop [Tc=25°C; Initial values; QSI measuring apparatus; Po=200mW]
typical:235 mA; max:280 mA
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Overview

QL80R4S-A/B/C/D/E-Z5 is a MOCVD grown808nm band laser diode with quantum well structure. Its typical light output power is200mW for optoelectronic devices such as solid state laser pumping and medical use.

Specifications

ParameterValue
Optical Output Power P [Absolute Maximum Rating; Tc=25°C]200 mW
Laser Diode Reverse Voltage V [Absolute Maximum Rating; Tc=25°C]2 V
Photo Diode Reverse Voltage V [Absolute Maximum Rating; Tc=25°C]30 V
Operating Temperature Topr [Absolute Maximum Rating; Tc=25°C]−10 ~ +40
Storage Temperature Tstg [Absolute Maximum Rating; Tc=25°C]−40 ~ +85
Optical Output Power Po [Tc=25°C; Initial values; QSI measuring apparatus]typical:200 mW
Threshold Current Ith [Tc=25°C; Initial values; QSI measuring apparatus]typical:55 mA; max:80 mA
Operating Current Iop [Tc=25°C; Initial values; QSI measuring apparatus; Po=200mW]typical:235 mA; max:280 mA
Operating Voltage Vop [Tc=25°C; Initial values; QSI measuring apparatus; Po=200mW]typical:1.9 V; max:2.5 V
Lasing Wavelength λp [Tc=25°C; Initial values; QSI measuring apparatus; Po=200mW]min:803 nm; typical:808 nm; max:813 nm
Beam Divergence Parallel θ∥ [Tc=25°C; Initial values; QSI measuring apparatus; Po=200mW; Full Width at Half Maximum]typical:8 deg; max:12 deg
Beam Divergence Perpendicular θ⊥ [Tc=25°C; Initial values; QSI measuring apparatus; Po=200mW; Full Width at Half Maximum]typical:35 deg; max:45 deg
Beam Angle Parallel Δθ∥ [Tc=25°C; Initial values; QSI measuring apparatus; Po=200mW]max:±3 deg
Beam Angle Perpendicular Δθ⊥ [Tc=25°C; Initial values; QSI measuring apparatus; Po=200mW]max:±3 deg
Monitor Current Im [Tc=25°C; Initial values; QSI measuring apparatus; Po=200mW]typical:0.5 mA; max:2.0 mA
Optical Distance ΔX,ΔY,ΔZ [Tc=25°C; Initial values; QSI measuring apparatus]max:±60 μm
Polarization [Electric Field Parallel to the Junction Plane]TE mode

Applications

Solid State Laser Pumping Medical Use Industrial Use

Key Features

Wavelength:λp=808nm Optical Output Power:200mW(CW) Package Type:TO-18(φ5.6mm) Polarization:TE(Electric Field Parallel to the Junction Plane)

Datasheet

Product Datasheet
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Supplier Information

Bu
Bu-laser
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Dongguan BU-Laser Co., Ltd. was established in September 2010. It is a high-tech enterprise integrating R&D, production and sales of semiconductor lasers. With the business philosophy of "innovation, effectiveness, quality and service" and the purpose of winning the market together with customers, let technology change the way of life! The company owns its own brands "LANJI" and "VIAN", and has won the reputation of China's honest semiconductor laser supplier, with multiple patent certifications. We are a laser high-tech company located in Dongguan, with more than 20 production lines and a daily production capacity of 50,000 pieces. There are 68 automated equipment and 200 employees. We can design customized lasers according to customer requirements. A professional technical team and efficient after-sales service bring the best service to every customer and escort you.

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808nm200mw Laser Diode QL80R4S-C
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