780nm100mw Laser Diode GH0781JA2C
The 780nm 100mW laser diode operates in the near infrared spectrum. Wavelength determines laser color and material penetration. This wavelength is invisible to the human eye and provides good transmission and penetration depth for certain applications. 1. Domestic brands: Huaguang and Huashang. 2. Sony.
Specification Snapshot
Optical power output PO [Absolute Maximum Ratings; TC=25˚C; Case temperature; CW]
120 mW
Storage temperature Tstg [Absolute Maximum Ratings; TC=25˚C; Case temperature]
-40 to+85 ˚C
Threshold current Ith [TC=25˚C; Initial value; CW drive]
typical:30 mA; max:40 mA
Operating current Iop [TC=25˚C; Initial value; CW drive; Po=100mW]
typical:141 mA; max:167 mA
Operating voltage Vop [TC=25˚C; Initial value; CW drive; Po=100mW]
typical:2.1 V; max:2.5 V
Wavelength λp [TC=25˚C; Initial value; CW drive; Po=100mW]
min:780 nm; typical:784 nm; max:787 nm
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Overview
The 780nm 100mW laser diode operates in the near infrared spectrum. Wavelength determines laser color and material penetration. This wavelength is invisible to the human eye and provides good transmission and penetration depth for certain applications. 1. Domestic brands: Huaguang and Huashang. 2. Sony.
Specifications
| Parameter | Value |
|---|---|
| Optical power output PO [Absolute Maximum Ratings; TC=25˚C; Case temperature; CW] | 120 mW |
| Optical power output pulse Pp [Absolute Maximum Ratings; TC=25˚C; Case temperature; Pulse width0.5µs; Duty50%] | 180 mW |
| Reverse voltage Laser Vrl [Absolute Maximum Ratings; TC=25˚C; Case temperature] | 2 V |
| Operating temperature CW Topc(c) [Absolute Maximum Ratings; TC=25˚C; Case temperature] | -10 to+65 ˚C |
| Operating temperature Pulse Topp(c) [Absolute Maximum Ratings; TC=25˚C; Case temperature; Pulse width0.5µs; Duty50%] | -10 to+75 ˚C |
| Storage temperature Tstg [Absolute Maximum Ratings; TC=25˚C; Case temperature] | -40 to+85 ˚C |
| Soldering temperature Tsld [Absolute Maximum Ratings; TC=25˚C; Case temperature; At position1.6mm or more from lead base; Within3s] | 300 ˚C |
| Threshold current Ith [TC=25˚C; Initial value; CW drive] | typical:30 mA; max:40 mA |
| Operating current Iop [TC=25˚C; Initial value; CW drive; Po=100mW] | typical:141 mA; max:167 mA |
| Operating voltage Vop [TC=25˚C; Initial value; CW drive; Po=100mW] | typical:2.1 V; max:2.5 V |
| Wavelength λp [TC=25˚C; Initial value; CW drive; Po=100mW] | min:780 nm; typical:784 nm; max:787 nm |
| Half intensity angle Parallel θ// [TC=25˚C; Initial value; CW drive; Po=100mW; Angle at50% peak intensity; FWHM; Parallel to junction plane(X-Z plane)] | min:7.8 ˚; typical:8.7 ˚; max:9.6 ˚ |
| Half intensity angle Perpendicular θ⊥ [TC=25˚C; Initial value; CW drive; Po=100mW; Angle at50% peak intensity; FWHM; Perpendicular to junction plane(Y-Z plane)] | min:14.5 ˚; typical:16 ˚; max:17.5 ˚ |
| Ripple Rl [TC=25˚C; Initial value; CW drive; Po=100mW; Rl=∆P/P; ∆P: maximum deviation of far field pattern from approximate curve; P: peak of approximate curve] | min:-20 %; max:+20 % |
| Misalignment angle Parallel ∆θ// [TC=25˚C; Initial value; CW drive; Po=100mW; Parallel to junction plane(X-Z plane)] | min:-1.5 ˚; max:+1.5 ˚ |
| Misalignment angle Perpendicular ∆θ⊥ [TC=25˚C; Initial value; CW drive; Po=100mW; Perpendicular to junction plane(Y-Z plane)] | min:-2.5 ˚; max:+2.5 ˚ |
| Differential efficiency ηd [TC=25˚C; Initial value; CW drive; 70mW/[I(100mW)−I(30mW)]] | min:0.8 mW/mA; typical:0.9 mW/mA; max:1.2 mW/mA |
| Interference pattern intensity α [TC=25˚C; Initial value; CW drive; Po=100mW] | max:1 |
| Kink K-LI [TC=25˚C; Initial value; Pulse drive; P1=36mW; P2=108mW; P3=180mW; Pulse width0.5µs; Duty50%] | max:10 % |
| Polarization ratio Pl [TC=25˚C; Initial value; CW drive; Po=3mW; NA=0.13] | min:20 |
Applications
CD-R drives
CD-RW drives
Key Features
Maximum optical power output120mW(CW)
High power: pulse MAX180mW; MAX×32speed writing
High coupling efficiency; ellipticity(θ⊥/θ//) close to1
Wavelength:TYP784nm
φ5.6mm package
Datasheet
Product Datasheet
PDF
Supplier Information
Dongguan BU-Laser Co., Ltd. was established in September 2010. It is a high-tech enterprise integrating R&D, production and sales of semiconductor lasers. With the business philosophy of "innovation, effectiveness, quality and service" and the purpose of winning the market together with customers, let technology change the way of life!
The company owns its own brands "LANJI" and "VIAN", and has won the reputation of China's honest semiconductor laser supplier, with multiple patent certifications.
We are a laser high-tech company located in Dongguan, with more than 20 production lines and a daily production capacity of 50,000 pieces. There are 68 automated equipment and 200 employees. We can design customized lasers according to customer requirements. A professional technical team and efficient after-sales service bring the best service to every customer and escort you.
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