770nm3mw Laser Diode QL78C7PB
QL78C7PB is a MOCVD grown 780nm band AlGaAs laser diode with multi quantum well structure. It is an attractive light source, with a typical light output power of 3mW for industrial optical pick up and sensor application.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Optical Output Power P [Absolute Maximum Rating; Tc=25°C] | 4.5 mW |
| Laser Diode Reverse Voltage V [Absolute Maximum Rating; Tc=25°C] | 2 V |
| Photo Diode Reverse Voltage V [Absolute Maximum Rating; Tc=25°C] | 30 V |
| Operating Temperature Topr [Absolute Maximum Rating; Tc=25°C] | -10 ~ +70 °C |
| Storage Temperature Tstg [Absolute Maximum Rating; Tc=25°C] | -40 ~ +85 °C |
| Optical Output Power Po [Tc=25°C] | typical:3 mW |
| Threshold Current Ith [Tc=25°C] | typical:25 mA; max:40 mA |
| Operating Current Iop [Tc=25°C; Po=3mW] | typical:30 mA; max:50 mA |
| Operating Voltage Vop [Tc=25°C; Po=3mW] | typical:1.9 V; max:2.3 V |
| Slope Efficiency SE [Tc=25°C; 2mW/I(3mW)-I(1mW)] | min:0.3 mW/mA; typical:0.5 mW/mA; max:0.7 mW/mA |
| Lasing Wavelength λp [Tc=25°C; Po=3mW] | min:770 nm; typical:785 nm; max:810 nm |
| Beam Divergence θ∥ [Tc=25°C; Po=3mW] | min:8 deg; typical:12 deg; max:16 deg |
| Beam Divergence θ⊥ [Tc=25°C; Po=3mW] | min:20 deg; typical:33 deg; max:45 deg |
| Beam Angle Δθ∥ [Tc=25°C; Po=3mW] | max:±3.0 deg |
| Beam Angle Δθ⊥ [Tc=25°C; Po=3mW] | max:±3.6 deg |
| Monitor Current Im [Tc=25°C; Po=3mW] | min:0.09 mA; typical:0.15 mA; max:0.6 mA |
| Optical Distance ΔX,ΔY,ΔZ [Tc=25°C; Po=3mW] | max:±100 ㎛ |
Applications
Key Features
Datasheet
Supplier Information
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