Sharp 380nm 200mW TO18 5.6mm Ultraviolet Laser Diode , for LDI Exposure GH0382AA2G
This product is equipped with an InGaN well violet laser diode. Oscillating transverse mode of this model is TE. Oscillating transverse mode of this model is multi-mode.
Specification Snapshot
Storage temperature Tstg [Absolute Maximum Ratings; Tc=25℃; Case temperature]
-40 ~ +85 ℃
Threshold current Ith [Tc=25℃; Initial value; Continuous Wave Operation]
typical:200 mA; max:275 mA
Operating current Iop [Tc=25℃; Initial value; Continuous Wave Operation; Po=200mW]
typical:325 mA; max:425 mA
Operating voltage Vop [Tc=25℃; Initial value; Continuous Wave Operation; Po=200mW]
typical:4.4 V; max:5.5 V
Wavelength λp [Tc=25℃; Initial value; Continuous Wave Operation; Po=200mW]
min:375 nm; typical:380 nm; max:385 nm
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Overview
This product is equipped with an InGaN well violet laser diode. Oscillating transverse mode of this model is TE. Oscillating transverse mode of this model is multi-mode.
Specifications
| Parameter | Value |
|---|---|
| Optical power output CW Po [Absolute Maximum Ratings; Tc=25℃; Case temperature] | 210 mW |
| Reverse voltage Vrl [Absolute Maximum Ratings; Tc=25℃; Case temperature] | 2 V |
| Operating temperature Case temperature Top(c) [Absolute Maximum Ratings; Tc=25℃] | +20 ~ +30 ℃ |
| Storage temperature Tstg [Absolute Maximum Ratings; Tc=25℃; Case temperature] | -40 ~ +85 ℃ |
| Soldering temperature Tsld [Absolute Maximum Ratings; Tc=25℃; Case temperature; soldering iron tip temperature; iron power20W; Soldering position1.6mm apart from bottom edge of case; Immersion time≤3s] | 350 ℃ |
| Threshold current Ith [Tc=25℃; Initial value; Continuous Wave Operation] | typical:200 mA; max:275 mA |
| Operating current Iop [Tc=25℃; Initial value; Continuous Wave Operation; Po=200mW] | typical:325 mA; max:425 mA |
| Operating voltage Vop [Tc=25℃; Initial value; Continuous Wave Operation; Po=200mW] | typical:4.4 V; max:5.5 V |
| Wavelength λp [Tc=25℃; Initial value; Continuous Wave Operation; Po=200mW] | min:375 nm; typical:380 nm; max:385 nm |
| 1/e² Intensity Angle Parallel θ∥ [Tc=25℃; Initial value; Continuous Wave Operation; Po=200mW; Full angle of13.5%(≒1/e²) peak intensity; Parallel to junction plane(X-Z plane)] | min:7 °; typical:15 °; max:23 ° |
| 1/e² Intensity Angle Perpendicular θ⊥ [Tc=25℃; Initial value; Continuous Wave Operation; Po=200mW; Full angle of13.5%(≒1/e²) peak intensity; Perpendicular to junction plane(Y-Z plane)] | min:28 °; typical:36 °; max:43 ° |
| Misalignment angle Parallel Δθ∥ [Tc=25℃; Initial value; Continuous Wave Operation; Po=200mW; Misalignment angle of13.5%(≒1/e²) peak intensity; Parallel to junction plane(X-Z plane)] | min:-5 °; max:5 ° |
| Misalignment angle Perpendicular Δθ⊥ [Tc=25℃; Initial value; Continuous Wave Operation; Po=200mW; Misalignment angle of13.5%(≒1/e²) peak intensity; Perpendicular to junction plane(Y-Z plane)] | min:-5 °; max:5 ° |
Datasheet
Product Datasheet
PDF
Supplier Information
Dongguan BU-Laser Co., Ltd. was established in September 2010. It is a high-tech enterprise integrating R&D, production and sales of semiconductor lasers. With the business philosophy of "innovation, effectiveness, quality and service" and the purpose of winning the market together with customers, let technology change the way of life!
The company owns its own brands "LANJI" and "VIAN", and has won the reputation of China's honest semiconductor laser supplier, with multiple patent certifications.
We are a laser high-tech company located in Dongguan, with more than 20 production lines and a daily production capacity of 50,000 pieces. There are 68 automated equipment and 200 employees. We can design customized lasers according to customer requirements. A professional technical team and efficient after-sales service bring the best service to every customer and escort you.
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