650nm5mw Laser Diode RLD65NZX2
InGaAlP Double-hetero Visible Laser Diode
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Overview
Specifications
| Parameter | Value |
|---|---|
| Optical output Po [Absolute Maximum Ratings; Tc=25℃] | 7 mW |
| Reverse voltage LD Vr [Absolute Maximum Ratings; Tc=25℃] | 2 V |
| Reverse voltage PIN PD Vr (PD) [Absolute Maximum Ratings; Tc=25℃] | 20 V |
| Operating Temperature. Top [Absolute Maximum Ratings; Tc=25℃] | -30 ～ 70 ℃ |
| Storage Temperature. Tstg [Absolute Maximum Ratings; Tc=25℃] | -40 ～ 85 ℃ |
| Threshold current Ith [Tc=25℃; Case temperature; 100% inspection] | typical:25 mA; max:35 mA |
| Operating current Iop [Tc=25℃; Case temperature; Po=5mW; 100% inspection] | typical:33 mA; max:45 mA |
| Operating voltage Vop [Tc=25℃; Case temperature; Po=5mW; 100% inspection] | typical:2.3 V; max:2.6 V |
| Output efficiency η [Tc=25℃; Case temperature; 2mW/(I(5mW)-I(3mW)); 100% inspection] | min:0.4 mW/mA; typical:0.6 mW/mA; max:1.0 mW/mA |
| Monitor current Im [Tc=25℃; Case temperature; Po=5mW; 100% inspection] | min:0.08 mA; typical:0.20 mA; max:0.50 mA |
| Beam divergence θ// [Tc=25℃; Case temperature; Po=5mW; full width at half maximum; 100% inspection] | min:6.0 deg.; typical:8.5 deg.; max:12.0 deg. |
| Beam divergence θ⊥ [Tc=25℃; Case temperature; Po=5mW; full width at half maximum; 100% inspection] | min:24 deg.; typical:28 deg.; max:34 deg. |
| Beam tolerance ⊿θ// [Tc=25℃; Case temperature; Po=5mW; 100% inspection] | min:-2 deg.; typical:0 deg.; max:+2 deg. |
| Beam tolerance ⊿θ⊥ [Tc=25℃; Case temperature; Po=5mW; 100% inspection] | min:-3 deg.; typical:0 deg.; max:+3 deg. |
| Emission point accuracy ⊿XYZ [Tc=25℃; Case temperature; 100% inspection] | min:-80 μm; typical:0 μm; max:+80 μm |
| Lasing wavelength λ [Tc=25℃; Case temperature; Po=5mW; 100% inspection] | min:650 nm; typical:655 nm; max:660 nm |
| Astigmatic difference As [Tc=25℃; Case temperature; NA=0.55, Po=3.5mW; random sample] | typical:5 μm; max:10 μm |
Applications
Datasheet
Supplier Information
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