20GHz DFB laser

20GHz DFB laser

Supplier
Ori-chip
Category
Laser Diodes
Origin
China

Based on original design,ORI-DFB-1310A-20 laser has low RIN performance of -155dB/Hz, 55dB side-mode rejection ratio, and wavelength accuracy of +/-1nm. This DFB laser achieves a 3 dB modulation bandwidth greater than 20 GHz at 60 mA injection current with flat bandwidth and high linearity.

Specification Snapshot
Threshold Current
<10mA
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Overview

Based on original design,ORI-DFB-1310A-20 laser has low RIN performance of -155dB/Hz, 55dB side-mode rejection ratio, and wavelength accuracy of +/-1nm. This DFB laser achieves a 3 dB modulation bandwidth greater than 20 GHz at 60 mA injection current with flat bandwidth and high linearity.

Specifications

ParameterValue
Threshold Current<10mA
Slope Efficiency~0.4W/A
Side-mode suppression ration55 dB
±2dB Small-signal modulation bandwidth(Chip)>20 GHz
±2dB Small-signal modulation bandwidth(Component)18 GHz
Amplitude noise(RIN) [@ 60mA-155dB/Hz @ 80mA]-150dB/Hz @ 60mA-155dB/Hz @ 80mA

Applications

This product realizes the direct modulation of wide-band RF signals and is suitable for microwave photonics fields such as the transmission of principal oscillator signals, clock signals, and electro-optical conversion of wide-band RF signals.

Datasheet

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Supplier Information

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Ori-chip
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Founded in 2018, Ori-Chip Optoelectronics Technology Co. Ltd., is dedicated to make the state-of-the-art photonic integrated circuits, including both InP and thin-film lithium niobate platforms. Our main products include: full C-band Widely-tunable lasers,Thin-film lithium niobate MZM modulators,and DFB laser diodes for both fiber optic communication and sensing. Using the cutting-edge InP and thin-film lithium niobate technology, our products deliver the best performance at competitive price. We hold multiple IPs, including patents from both China and the United States. All of our products are made in-house by ORI-CHIP wafer fabs.

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20GHz DFB laser
Ori-chip · Laser Diodes
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