Thin film LiNbO3 intensity modulator
Based on state-of-art Lithium Niobate on insulator (LNOI) technology, this intensity modulator inherits most of the advantages of traditional lithium niobate modulators, and has a miniature form factor, low driving voltage and low loss.
Specification Snapshot
half-wave voltage [@100 khz]
3.2 V(@100 khz)
RF bandwidth
40 GHz
insertion loss [-55℃~85℃]
< 4.5 dB(-55℃~85℃)
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Overview
Based on state-of-art Lithium Niobate on insulator (LNOI) technology, this intensity modulator inherits most of the advantages of traditional lithium niobate modulators, and has a miniature form factor, low driving voltage and low loss.
Specifications
| Parameter | Value |
|---|---|
| Component Length | 3cm |
| half-wave voltage [@100 khz] | 3.2 V(@100 khz) |
| RF bandwidth | 40 GHz |
| insertion loss [-55℃~85℃] | < 4.5 dB(-55℃~85℃) |
| extinction ratio | > 20 dB |
| RF return loss | < -10 dB |
Applications
Analog communication, intensity modulation, and BPSK phase modulation.
Datasheet
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Supplier Information
Founded in 2018, Ori-Chip Optoelectronics Technology Co. Ltd., is dedicated to make the state-of-the-art photonic integrated circuits, including both InP and thin-film lithium niobate platforms. Our main products include:
full C-band Widely-tunable lasers,Thin-film lithium niobate MZM modulators,and DFB laser diodes for both fiber optic communication and sensing.
Using the cutting-edge InP and thin-film lithium niobate technology, our products deliver the best performance at competitive price. We hold multiple IPs, including patents from both China and the United States.
All of our products are made in-house by ORI-CHIP wafer fabs.
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