Folded Intensity Modulator with Ultra-low Vπ ORI-MZM-OV-BW
EOM

Folded Intensity Modulator with Ultra-low Vπ ORI-MZM-OV-BW

Supplier
Ori-chip
Part Number
ORI-MZM-OV-BW
Category
EOM
Origin
China

Based on state-of-art Lithium Niobate on insulator (LNOI) technology, this intensity modulator inherits most of the advantages of traditional lithium niobate modulators, and has a miniature form factor, low driving voltage and low loss. We have two versions for this product, ORI-MZM-OT-BW is the thermal tuning version, whose phase shift is tuned by micron heaters integrated on chip. ORI-MZM-OV-BW is the voltage tuning version. Compared to traditional LN modulators, the heater version could maintain a lot more stable bias point throughout lifetime of the device. Please note that for ORI-MZM-OV-BW version, the RF input must be AC coupled, and can sustain the voltage applied on the DC port.

Specification Snapshot
Insertion loss IL
typical:4.5 dB; max:5 dB
Wavelength range
min:1535 nm; typical:1550 nm; max:1565 nm
Request a Quote Download Datasheet
Save to Favorites Save to Favorites

Overview

Based on state-of-art Lithium Niobate on insulator (LNOI) technology, this intensity modulator inherits most of the advantages of traditional lithium niobate modulators, and has a miniature form factor, low driving voltage and low loss. We have two versions for this product, ORI-MZM-OT-BW is the thermal tuning version, whose phase shift is tuned by micron heaters integrated on chip. ORI-MZM-OV-BW is the voltage tuning version. Compared to traditional LN modulators, the heater version could maintain a lot more stable bias point throughout lifetime of the device. Please note that for ORI-MZM-OV-BW version, the RF input must be AC coupled, and can sustain the voltage applied on the DC port.

Specifications

ParameterValue
RF Vπ @ 1kHz V_(pi_RF)typical:1.9 V; max:2.2 V
RF Vπ @ 1GHz V_(pi_RF)max:2.5 V
Electro-optical 3-dB Bandwidth BWmin:20/40
Electrical return lossmax:-10 dB
Characteristic impedance Z_(c)typical:50 Ohm
DC input impedance R_(DC)typical:1 KOhm
DC Vπ V_(π_DC)typical:3.3 V; max:3.5 V
Insertion loss ILtypical:4.5 dB; max:5 dB
DC Extinction ratio ERmin:20 dB
Wavelength rangemin:1535 nm; typical:1550 nm; max:1565 nm
PD responsivity [max PD photocurrent over max output optical power, with fixed input]min:0.01 A/W; max:0.5 A/W
Optical return loss RLmax:-30 dB

Applications

RoF, Antenna remoting, Microwave and Radar links

Key Features

● State-of-art LNOI technology ● Low Vpi ~2V ● High Bandwidth ● Low Insertion Loss ● Small size: roughly 2.8cm long

Datasheet

Please provide your email to download the datasheet.

Your name
Email Address

Invalid email format. Please try again.

Send Request

Supplier Information

Or
Ori-chip
View Supplier →
Founded in 2018, Ori-Chip Optoelectronics Technology Co. Ltd., is dedicated to make the state-of-the-art photonic integrated circuits, including both InP and thin-film lithium niobate platforms. Our main products include: full C-band Widely-tunable lasers,Thin-film lithium niobate MZM modulators,and DFB laser diodes for both fiber optic communication and sensing. Using the cutting-edge InP and thin-film lithium niobate technology, our products deliver the best performance at competitive price. We hold multiple IPs, including patents from both China and the United States. All of our products are made in-house by ORI-CHIP wafer fabs.

Request a Quote

Our team responds within 24–48 hours
Folded Intensity Modulator with Ultra-low Vπ ORI-MZM-OV-BW
Ori-chip · EOM
Direct from Manufacturer
Your inquiry will be sent directly to the manufacturer
Photonics Source Platform
We handles the inquiry on your behalf
Your information is protected and will never be shared without consent.
Contact Us

Loading...

GetExperimental Plan

Name

Phone

+86

Organization

Use Case

AI Parametric Selection
Smart Match · Precise Recs
Enter Specifications
AI Smart Matching
Get Best Matches
Skip Manual Comparison
Find Best Solutions Fast
Select Now →