20G Analog LD
Specification Snapshot
Threshold Current Iₜₕ [25°C, CW]
typical:10 mA; max:14 mA
Threshold Current Iₜₕ [85°C, CW]
typical:16 mA; max:20 mA
Center Wavelengths [25°C, CW, If=40mA]
min:λ_(c)-1; typical:λ_(c); max:λ_(c)+1
Side Mode Suppression ratio SMSR [CW, Iₜₕ+40 mA]
min:45 dB; typical:55 dB
Modulation Bandwidth BW [25°C, CW, Iₜₕ+40 mA]
min:16 GHz; typical:17 GHz
Modulation Bandwidth BW [25°C, CW, Iₜₕ+60 mA]
min:18 GHz; typical:20 GHz
Request a Quote
Download Datasheet
Specifications
| Parameter | Value |
|---|---|
| Threshold Current Iₜₕ [25°C, CW] | typical:10 mA; max:14 mA |
| Threshold Current Iₜₕ [85°C, CW] | typical:16 mA; max:20 mA |
| Slope Efficiency I= Iₜₕ+10 mA to Iₜₕ+40 mA SE [25°C, CW;I= Iₜₕ+10 mA to Iₜₕ+40 mA] | min:0.25 W/A; typical:0.30 W/A |
| Slope Efficiency I= Iₜₕ+10 mA to Iₜₕ+40 mA SE [70°C, CW;I= Iₜₕ+10 mA to Iₜₕ+40 mA] | min:0.15 W/A; typical:0.20 W/A |
| Optical Output Power [25°C, Iₜₕ+40 mA] | min:10 mW; typical:12 mW |
| Laser Forward Voltage V_(f) [25°C, Iₜₕ+40 mA] | typical:1.5 V; max:1.7 V |
| Resistance [25°C, CW, Iₜₕ+20 mA] | typical:10 Ω; max:15 Ω |
| Center Wavelengths [25°C, CW, If=40mA] | min:λ_(c)-1; typical:λ_(c); max:λ_(c)+1 |
| Side Mode Suppression ratio SMSR [CW, Iₜₕ+40 mA] | min:45 dB; typical:55 dB |
| Modulation Bandwidth BW [25°C, CW, Iₜₕ+40 mA] | min:16 GHz; typical:17 GHz |
| Modulation Bandwidth BW [25°C, CW, Iₜₕ+60 mA] | min:18 GHz; typical:20 GHz |
| Relative intensity noise RIN [25°C, Iₜₕ+40mA] | typical:-150 dBc/Hz |
| Kink [Range[20,70]mA, CW] | max:20 % |
| Temperature Dependence of Wavelength [CW] | typical:0.09 nm/deg |
| 20dB Width [CW, Iₜₕ+20 mA] | max:1 nm |
| Far Field (Vertical) [Iₜₕ+20 mA, CW] | typical:36 deg |
| Far Field (Horizontal) [Iₜₕ+20 mA, CW] | typical:25 deg |
Applications
Analog transceivers
Key Features
● 1270, 1290, 1310, 1330 nm DFB Laser ● 20 GHz RF bandwidth at room temperature ● RIN < 150dB ● SMSR > 50dB @ RT
Datasheet
Please provide your email to download the datasheet.
Your name
Email Address
Invalid email format. Please try again.
Send Request
Supplier Information
Founded in 2018, Ori-Chip Optoelectronics Technology Co. Ltd., is dedicated to make the state-of-the-art photonic integrated circuits, including both InP and thin-film lithium niobate platforms. Our main products include:
full C-band Widely-tunable lasers,Thin-film lithium niobate MZM modulators,and DFB laser diodes for both fiber optic communication and sensing.
Using the cutting-edge InP and thin-film lithium niobate technology, our products deliver the best performance at competitive price. We hold multiple IPs, including patents from both China and the United States.
All of our products are made in-house by ORI-CHIP wafer fabs.
Contact Us
Loading...
GetExperimental Plan
Name
Phone
+86
Organization
Use Case

Global Photonics Products
Database Platform
Database Platform
With 16 years of experience, we provide high-quality products and services to universities, research institutes, and industry.
50+ Detailed Categories · 3,000+ Global Brands · 100,000+ Photonics Products
1 Million+
In-depth analysis of professional academic resources in photonics
300,000
ProductsDatasheets Available Free
We will keep your personal information strictly confidential.
Product Quote
+86
* Select the quoting party:
By submitting, you agree to the User Service Agreement and Privacy Policy