10G XGS PON LD

10G XGS PON LD

Supplier
Ori-chip
Part Number
ORI-DFB-1270P-10
Category
Optical Receiver Equipment
Origin
China
Specification Snapshot
Threshold Current Iₜₕ [25°C, CW]
typical:10 mA; max:14 mA
Threshold Current Iₜₕ [85°C, CW]
max:25 mA
Center Wavelengths [25°C, CW, Iₜₕ+20 mA]
min:λ_(c)-2; typical:λ_(c); max:λ_(c)+2
Side Mode Suppression ratio SMSR [CW, Iₜₕ+20 mA]
min:35 dB; typical:45 dB
Modulation Bandwidth BW [25°C, CW, Iₜₕ+20 mA]
min:12 GHz; typical:16 GHz
Modulation Bandwidth BW [85°C, CW, Iₜₕ+20 mA]
min:8 GHz; typical:12 GHz
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Specifications

ParameterValue
Threshold Current Iₜₕ [25°C, CW]typical:10 mA; max:14 mA
Threshold Current Iₜₕ [85°C, CW]max:25 mA
Slope Efficiency SE [25°C, CW, Iₜₕ+20mA]min:0.4 W/A; typical:0.45 W/A
Slope Efficiency SE [85°C, CW, Iₜₕ+20mA]min:0.25 W/A; typical:0.28 W/A
Optical Output Power [25°C, Iₜₕ+20 mA]min:8 mW; typical:9 mW
Optical Output Power [85°C, Iₜₕ+20 mA]min:4 mW; typical:5 mW
Laser Forward Voltage V_(f) [25°C, Iₜₕ+20 mA]typical:1.25 V; max:1.5 V
Resistance [25°C, CW, Iₜₕ+20 mA]typical:12 Ω; max:15 Ω
Center Wavelengths [25°C, CW, Iₜₕ+20 mA]min:λ_(c)-2; typical:λ_(c); max:λ_(c)+2
Side Mode Suppression ratio SMSR [CW, Iₜₕ+20 mA]min:35 dB; typical:45 dB
Modulation Bandwidth BW [25°C, CW, Iₜₕ+20 mA]min:12 GHz; typical:16 GHz
Modulation Bandwidth BW [85°C, CW, Iₜₕ+20 mA]min:8 GHz; typical:12 GHz
Kink [Range[10,70]mA, CW]max:20 %
Temperature Dependence of Wavelength [CW]typical:0.09 nm/deg
20dB Width [CW, Iₜₕ+20 mA]max:1 nm
Far Field (Vertical) [Iₜₕ+20 mA, CW]typical:25 deg
Far Field (Horizontal) [Iₜₕ+20 mA, CW]typical:36 deg

Applications

10G EPON, XGS PON

Key Features

● 1270 nm DFB Laser ● Direct modulation up to 10 Gbps ● High Temperature Operation: -40 to 85 °C

Datasheet

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Supplier Information

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Ori-chip
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Founded in 2018, Ori-Chip Optoelectronics Technology Co. Ltd., is dedicated to make the state-of-the-art photonic integrated circuits, including both InP and thin-film lithium niobate platforms. Our main products include: full C-band Widely-tunable lasers,Thin-film lithium niobate MZM modulators,and DFB laser diodes for both fiber optic communication and sensing. Using the cutting-edge InP and thin-film lithium niobate technology, our products deliver the best performance at competitive price. We hold multiple IPs, including patents from both China and the United States. All of our products are made in-house by ORI-CHIP wafer fabs.

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10G XGS PON LD
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