Narrow-Linewidth Quantum Cascade Laser Diode
Quantum cascade lasers operate differently from electron–hole recombination stimulated emission in conventional p-n-junction semiconductor lasers. The source states that emission wavelength is determined by the semiconductor bandgap, that these devices fill the mid-IR semiconductor-laser gap, and that changing quantum-well thickness readily changes emission wavelength. Their invention enables reliable, high-power semiconductor lasers with high characteristic temperatures in the mid/far-IR. Puxian Technology offers ALPES quantum cascade lasers from DFB to external-cavity types for gas monitoring, composition analysis, and combustion-efficiency research.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Wavelength Range | min:4.25um; max:12.5um |
| Operating Current | max:1200mA |
| Output Power | min:1mW; max:150mW |
| Operating Temperature | min:-30℃; max:+50℃ |
Key Features
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