1653-HP
Etern-laser introduces a high-power 1653nm DFB chip. At 25℃, it delivers over 60mW, with a center wavelength of 1653.7nm; the wavelength can be customized. It uses an Al-containing multiple-quantum-well active-layer structure and a ridge-waveguide process for low threshold, high output efficiency, and high reliability. All chips undergo a strict Certification process before shipment to ensure high yield and quality.
Specification Snapshot
Threshold Current Ith [CW;Tc=35℃]
max:35 mA
Operating Current Iop [CW,P=40mW;Tc=35℃]
typical:250 mA; max:300 mA
Operating Voltage Vop [CW,P=40mW;Tc=35℃]
max:2.1 V
Center Wavelength λ [CW, Iop=250mA;Tc=35℃]
min:1652.7 nm; typical:1653.2 nm; max:1653.7 nm
Side-mode Suppression Ratio SMSR [CW, Iop=250mA;Tc=35℃]
min:50 dB; typical:55 dB
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Overview
Etern-laser introduces a high-power 1653nm DFB chip. At 25℃, it delivers over 60mW, with a center wavelength of 1653.7nm; the wavelength can be customized. It uses an Al-containing multiple-quantum-well active-layer structure and a ridge-waveguide process for low threshold, high output efficiency, and high reliability. All chips undergo a strict Certification process before shipment to ensure high yield and quality.
Specifications
| Parameter | Value |
|---|---|
| Threshold Current Ith [CW;Tc=35℃] | max:35 mA |
| Optical Output Power [CW,Iop=250mA;Tc=35℃] | min:35 mW |
| Operating Current Iop [CW,P=40mW;Tc=35℃] | typical:250 mA; max:300 mA |
| Slope Efficiency SE [CW,Iop=250mA;Tc=35℃] | min:0.1 mW/mA |
| Operating Voltage Vop [CW,P=40mW;Tc=35℃] | max:2.1 V |
| Series Resistance Rs [CW,P=40mW;Tc=35℃] | max:5 Ω |
| Center Wavelength λ [CW, Iop=250mA;Tc=35℃] | min:1652.7 nm; typical:1653.2 nm; max:1653.7 nm |
| Wavelength Temperature Coefficient Δλ/ΔT [Tc=35℃] | typical:0.1 nm/°C |
| Side-mode Suppression Ratio SMSR [CW, Iop=250mA;Tc=35℃] | min:50 dB; typical:55 dB |
| Far-field Angle (FWHM) θ// [Tc=35℃] | typical:30 Deg |
| Far-field Angle (FWHM) θ⊥ [Tc=35℃] | typical:40 Deg |
Applications
Sensing
Key Features
1653.7nm Wavelength Ridge waveguide with multi-quantum well ROHS compliant High reliability according to Telcordia GR-468
Datasheet
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Supplier Information
Suzhou Dingxin Optoelectronic Technology Co., Ltd. is dedicated to the R&D and manufacturing of high-performance integrated optical chips. It possesses an industry-leading compound semiconductor process line supporting 3/4/6-inch wafer mass production, with capabilities covering chip design, crystal material growth, wafer fabrication, testing and packaging, providing one-stop solutions from wafer to device. Adopting an IDM model, the company enforces strict reliability standards. Its product portfolio includes EML, communication DFB, silicon photonics DFB, sensing, narrow linewidth laser chips, etc., applied in telecom, datacom, LiDAR, methane detection, and offers customized design and foundry services.
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