10G DML DR010GCM06C01
Etern-laser offers single-mode edge-emitting directly modulated laser (DML) chips with modulation rates of 10Gb/s across an uncooled industrial temperature range. An Al-containing multiple-quantum-well active structure and dual-trench ridge-waveguide process provide low threshold, high bandwidth, high optical-output efficiency and high reliability. Every chip undergoes a strict Certification process before shipment for high yield and quality.
Specification Snapshot
Operating Temperature
min:-40 °C; max:85 °C
Threshold Current Ith [CW 25°C]
typical:7 mA; max:12 mA
Threshold Current Ith [CW 85°C]
typical:15 mA; max:25 mA
Operating Current Iop [CW,Po=5mW 25°C]
typical:20 mA
Operating Current Iop [CW,Po=5mW 85°C]
max:60 mA
Forward Voltage VF [If=Ith+20mA, 25°C]
typical:1.2 V; max:1.5 V
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Overview
Etern-laser offers single-mode edge-emitting directly modulated laser (DML) chips with modulation rates of 10Gb/s across an uncooled industrial temperature range. An Al-containing multiple-quantum-well active structure and dual-trench ridge-waveguide process provide low threshold, high bandwidth, high optical-output efficiency and high reliability. Every chip undergoes a strict Certification process before shipment for high yield and quality.
Specifications
| Parameter | Value |
|---|---|
| Operating Temperature | min:-40 °C; max:85 °C |
| Threshold Current Ith [CW 25°C] | typical:7 mA; max:12 mA |
| Threshold Current Ith [CW 85°C] | typical:15 mA; max:25 mA |
| Optical Output Power [If=Ith+20mA, 25°C] | min:6 mW; typical:8 mW |
| Optical Output Power [If=Ith+20mA, 85°C] | min:4 mW; typical:5 mW |
| Slope Efficiency SE [If=Ith+20mA, 25°C] | min:0.3 mW/mA |
| Slope Efficiency SE [If=Ith+20mA, 85°C] | min:0.2 mW/mA |
| Kink [If=Ith+5mA~60mA] | max:20 % |
| Operating Current Iop [CW,Po=5mW 25°C] | typical:20 mA |
| Operating Current Iop [CW,Po=5mW 85°C] | max:60 mA |
| Forward Voltage VF [If=Ith+20mA, 25°C] | typical:1.2 V; max:1.5 V |
| Forward Voltage VF [If=Ith+20mA, 85°C] | typical:1.3 V; max:1.6 V |
| Series Resistance Rs [If=Ith+20mA] | typical:7 Ω; max:15 Ω |
| Center Wavelength λ [If=Ith+20mA Tc=-40°C~85°C] | min:1361 nm; typical:1371 nm; max:1381 nm |
| Spectral Width (-20 dB) Δλ [If=Ith+20mA@-20dB] | typical:0.4 nm; max:1 nm |
| Wavelength Temperature Coefficient Δλ/ΔT [If=Ith+20mA Tc=-40°C~85°C] | typical:0.09 nm/°C |
| Side-mode Suppression Ratio SMSR [If=Ith+20mA Tc=-40°C~85°C] | min:35 dB; typical:45 dB |
| Relaxation Oscillation Frequency fR [Ibias=Ith+20mA@-3dB] | min:10 GHz |
| Far-field Angle (FWHM) θ// [If=Ith+20mA, 25°C] | typical:25 Deg |
| Far-field Angle (FWHM) θ⊥ [If=Ith+20mA, 25°C] | typical:30 Deg |
Applications
10G PON Ethernet Access Data center
Key Features
Modulation rate up to 10.5Gbps Ridge waveguide with multi-quantum well structure Low threshold High power efficiency High side mode suppression ratio The operating temperature ranges from -40℃ to 85℃ High reliability according to Telcordia GR-468
Datasheet
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Supplier Information
Suzhou Dingxin Optoelectronic Technology Co., Ltd. is dedicated to the R&D and manufacturing of high-performance integrated optical chips. It possesses an industry-leading compound semiconductor process line supporting 3/4/6-inch wafer mass production, with capabilities covering chip design, crystal material growth, wafer fabrication, testing and packaging, providing one-stop solutions from wafer to device. Adopting an IDM model, the company enforces strict reliability standards. Its product portfolio includes EML, communication DFB, silicon photonics DFB, sensing, narrow linewidth laser chips, etc., applied in telecom, datacom, LiDAR, methane detection, and offers customized design and foundry services.
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