COS-Packaged Semiconductor Laser
COS (Chip On Submount) directly mounts semiconductor-laser chips on a base. Efficient,advanced packaging with low thermal resistance/high reliability serves industrial processing,medical equipment and communications. Power options:10W~45W;wavelengths:808~1064nm;half-wave full width:6nm.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Output Power [808] | 8~10 W |
| Center Wavelength [808] | 808 nm |
| Threshold Current [808] | 1~1.8 A |
| Operating Current [808] | 8.5~11 A |
| Operating Voltage [808] | 1.75 V |
| Fast-Axis Emission Angle [808；95%] | 58 ° |
| Slow-Axis Emission Angle [808；95%] | 11 ° |
| Slope Efficiency [808] | 1.1 |
| Electrical-to-Optical Conversion Efficiency [808] | 52~54 % |
| Center Wavelength [808；2A Wavelength] | 800~804 |
| Full Width at Half Maximum [808] | 6 nm |
| Polarization State [808] | 80 % |
| Emitting Surface Width [808] | 200~400 μm |
| Soldering temperature [808] | ≤260 ℃ |
| Operating Temperature [808] | 15~40 ℃ |
| Storage Temperature [808] | 0~70 ℃ |
| Temperature Drift Coefficient [808] | 0.3 nm/°C |
| Dimensions (L×W×H) [808] | 4.8×4.05×0.456 / 4.5×5.7×0.5 |
| Weight [808] | <1 g |
| Output Power [880] | 10~15 W |
| Center Wavelength [880] | 878 nm |
| Threshold Current [880] | 1.5 A |
| Operating Current [880] | 11~15 A |
| Operating Voltage [880] | 1.75 V |
| Fast-Axis Emission Angle [880；95%] | 58 ° |
| Slow-Axis Emission Angle [880；95%] | 11 ° |
| Slope Efficiency [880] | 1.1 |
| Electrical-to-Optical Conversion Efficiency [880] | 52~57 % |
| Center Wavelength [880；2A Wavelength] | 874~877 |
| Full Width at Half Maximum [880] | 6 nm |
| Polarization State [880] | 80 % |
| Emitting Surface Width [880] | 200~400 μm |
| Soldering temperature [880] | ≤260 ℃ |
| Operating Temperature [880] | 15~40 ℃ |
| Storage Temperature [880] | 0~70 ℃ |
| Temperature Drift Coefficient [880] | 0.3 nm/°C |
| Dimensions (L×W×H) [880] | 4.8×4.05×0.456 / 4.5×5.7×0.5 |
| Weight [880] | <1 g |
| Output Power [915] | 12~35 W |
| Center Wavelength [915] | 915 nm |
| Threshold Current [915] | 0.6~1.8 A |
| Operating Current [915] | 12~35 A |
| Operating Voltage [915] | 1.75 V |
| Fast-Axis Emission Angle [915；95%] | 58 ° |
| Slow-Axis Emission Angle [915；95%] | 11 ° |
| Slope Efficiency [915] | 1.03 |
| Electrical-to-Optical Conversion Efficiency [915] | 55~57 % |
| Center Wavelength [915；2A Wavelength] | 903~915 |
| Full Width at Half Maximum [915] | 6 nm |
| Polarization State [915] | 95 % |
| Emitting Surface Width [915] | 96~230 μm |
| Soldering temperature [915] | ≤260 ℃ |
| Operating Temperature [915] | 15~40 ℃ |
| Storage Temperature [915] | 0~70 ℃ |
| Temperature Drift Coefficient [915] | 0.3 nm/°C |
| Dimensions (L×W×H) [915] | 4.8×4.05×0.456 / 4.5×5.7×0.5 |
| Weight [915] | <1 g |
| Output Power [976] | 12~35 W |
| Center Wavelength [976] | 976 nm |
| Threshold Current [976] | 0.6~1.8 A |
| Operating Current [976] | 12~35 A |
| Operating Voltage [976] | 1.75 V |
| Fast-Axis Emission Angle [976；95%] | 58 ° |
| Slow-Axis Emission Angle [976；95%] | 11 ° |
| Slope Efficiency [976] | 1.03 |
| Electrical-to-Optical Conversion Efficiency [976] | 55~57 % |
| Center Wavelength [976；2A Wavelength] | 960~970 |
| Full Width at Half Maximum [976] | 6 nm |
| Polarization State [976] | 95 % |
| Emitting Surface Width [976] | 100~230 μm |
| Soldering temperature [976] | ≤260 ℃ |
| Operating Temperature [976] | 15~40 ℃ |
| Storage Temperature [976] | 0~70 ℃ |
| Temperature Drift Coefficient [976] | 0.3 nm/°C |
| Dimensions (L×W×H) [976] | 4.8×4.05×0.456 / 4.5×5.7×0.5 |
| Weight [976] | <1 g |
Key Features
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