30W/50W/200W Semiconductor Laser JPT-30W
30W/50W/200W. Mainly used for photovoltaic cell inspection, this is a noncontact inspection method based on optical excitation and high-sensitivity camera imaging. It is widely used for quality inspection of silicon wafers, solar cells, and other semiconductor materials. Selectable power: 30/50/200W. Center wavelength: 808±5/915±10nm. Full half-wave width: 10nm.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Output Power | 30 W |
| Center Wavelength | 808 nm |
| Center Wavelength Deviation | ±5 |
| Typical Working Distance | 230~260 mm |
| Inspectable Silicon Wafer Sizes | ≤230 mm |
| Electrical Distribution Requirement | 220 V |
| IO Interface | White 0~24V+ / black 0~0.5V- |
| Average Power Consumption | 100 W |
| Laser Emission Control Method | GUI/IO Interface |
| Power Adjustment Method | GUI |
| Operating Temperature and Humidity | 20~30 ℃ |
| Operating Temperature and Humidity | ＜80% |
| Dimensions (L×W×H) | 205 mm × 111 mm × 123 mm |
| Weight | ≈4 kg |
| Applicable Processes | Processes after silicon wafer coating |
| Cooling Method | Air Cooling |
Key Features
Datasheet
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