Silicon Longpass Filters PSiWA4001
Silicon long wave pass filters are optical devices based on silicon-based materials, and the optical properties of silicon substrates are closely related to their preparation methods. Silicon long wave pass filters have good transmittance in the 1-8 μ m wavelength range, typically composed of multiple layers of reflective film and silicon substrate. The design of these film layers allows only light with a wavelength greater than a certain set value to pass through the filter, while shorter wavelength light is reflected or absorbed. In the 1-8 μ m wavelength range, it has a high transmittance, which is the main operating band of silicon long wave pass filters. In the 8-14 μ m wavelength range, the transmittance begins to decrease due to the absorption of oxygen elements. In the field of optics, silicon long wave pass filters are applied in the manufacturing of special optical glass, fiber optic amplifiers, laser crystals, and infrared detectors.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Diameter | 4 inch |
| Thickness | 275-1000 μm |
| Orientation | <100> |
| Substrate Material | Silicon（Si） |
| Conductivity Type | N / P |
| Diameter Tolerance | ±0.2 mm |
| Thk Tolerance | ±10 mm |
| Orientation Tolerance | ±1° |
| Resistance | 10-1000 Ω.cm |
| TTV | <10 μm |
| BOW | <30 μm |
| WARP | <30 μm |
| Transmission Range [Substrate Material：Silicon（Si）] | 1.2-15μm |
| Refractive Index [Substrate Material：Silicon（Si）；@10μm] | 3.41776%@10μm |
| Reflection Loss [Substrate Material：Silicon（Si）；@10μm] | 46.1%@10μm |
| Structure [Substrate Material：Silicon（Si）] | Single crystal,synthetic |
| Cleavage Planes [Substrate Material：Silicon（Si）] | <111> |
| Density [Substrate Material：Silicon（Si）] | 2.33 g/cm³ |
| Melting Point [Substrate Material：Silicon（Si）] | 1414 ℃ |
| Thermal Conductivity [Substrate Material：Silicon（Si）；@313K] | 163 @ 313K |
| Thermal Expansion [Substrate Material：Silicon（Si）；@293K] | 2.6 @ 293K |
| Knoop Hardness [Substrate Material：Silicon（Si）] | 1100 kg/mm² |
| Specific Heat Capacity [Substrate Material：Silicon（Si）] | 712.8 J/(kg×K) |
| Dielectric Constant [Substrate Material：Silicon（Si）；@f= 9.37GHz] | 13 @f= 9.37GHz |
| Young's Modulus (E) [Substrate Material：Silicon（Si）] | 130.91 GPa |
| Shear Modulus(G) [Substrate Material：Silicon（Si）] | 79.92 GPa |
| Bulk Modulus(K) [Substrate Material：Silicon（Si）] | 101.97 GPa |
| Poisson Coefficient [Substrate Material：Silicon（Si）] | 0.266 |
| Solubility [Substrate Material：Silicon（Si）] | None |
| Molecular Weight [Substrate Material：Silicon（Si）] | 28.09 g/mol |
Applications
Datasheet
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Supplier Information
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