Nd,Ce:YAG
Laser wavelength: 1.064μm; melting point: 1970℃; density: 4.56g/cm3; orientation: [111]±5°; parallelism: <10 arc seconds; perpendicularity: <5 arc minutes; bevel: 0.1mm@45°; extinction ratio: >30dB; surface quality: 10/5. Nd:Ce:YAG is an ideal active material for repetitive air-cooled or naturally cooled lasers. Our Nd:Ce:YAG rods offer high efficiency, low threshold, UV resistance, and good repetition-rate characteristics for CW, pulsed, Q-switched, mode-locked, and frequency-doubled operation.
Specification Snapshot
Laser Wavelength
1.064μm
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Overview
Laser wavelength: 1.064μm; melting point: 1970℃; density: 4.56g/cm3; orientation: [111]±5°; parallelism: <10 arc seconds; perpendicularity: <5 arc minutes; bevel: 0.1mm@45°; extinction ratio: >30dB; surface quality: 10/5.
Nd:Ce:YAG is an ideal active material for repetitive air-cooled or naturally cooled lasers. Our Nd:Ce:YAG rods offer high efficiency, low threshold, UV resistance, and good repetition-rate characteristics for CW, pulsed, Q-switched, mode-locked, and frequency-doubled operation.
Specifications
| Parameter | Value |
|---|---|
| Laser Wavelength | 1.064μm |
| Photon Energy [1064nm] | 1.86×10-19J@1064nm |
| Excitation Linewidth [1064nm] | 4.5Å@1064nm |
| Stimulated Emission Area [Nd1at%] | 2.7~8.8×10-19cm-2 |
| Fluorescence Lifetime [Nd1at%] | 230μs |
| Refractive Index [1064nm] | 1.8197@1064nm |
| Crystal Structure | Cubic |
| Lattice Parameters | 12.01Å |
| Melting Point | 1970℃ |
| Mohs Hardness | 8.5 |
| Density | 4.56g/cm3 |
| Specific heat [0-20] | 0.59J/g.cm3 |
| Young's Modulus | 3.17 Kg/mm2 × 104 Kg/mm2 |
| Coefficient of Thermal Expansion [0~250℃] | [100]: 8.2×10-6/℃(0~250℃) |
| Coefficient of Thermal Expansion [0~250℃] | [110] : 7.7×10-6/℃(0~250℃) |
| Coefficient of Thermal Expansion | [111] : 7.8×10-6 |
| Thermal Conductivity [20℃] | 14W/m/K(@20℃) |
| Thermo-Optic Coefficient dn/dT [100℃] | 10.5W/m/K(@100℃) |
| Thermal Shock Resistance | 7.3×10-6/℃ |
| Water Solubility | 790W/m |
| Dopant Concentration -Nd | 1.1~1.4at% |
| Dopant Concentration -Ce | 0.05~0.1at% |
| Optical Axis Direction | [111]±5° |
| Dimensions - Diameter | 3~6mm |
| Dimensions - Length | 40~100mm |
| Diameter Tolerance | +0/-0.02mm |
| Length Tolerance | +0.5/-0mm |
| Surface Figure [632.8nm] | <λ/10@632.8nm |
| Wavefront Distortion [632.8nm; per 25mm] | <λ/10@632.8nm per 25mm |
| Surface Quality | 10/5 |
| Clear Aperture Dimension | >95% |
| Parallelism | <10 arcsec |
| Perpendicularity | <5 arcmin |
| Chamfer [45°] | 0.1mm@45° |
| Edge Treatment | 400# |
| Extinction Ratio | >30dB |
| Antireflection Coating [1064nm] | R<0.15%@1064nm |
| High-reflection Coating | R>99.8%@1064nm & R<5%@808nm |
Key Features
High beam quality; high efficiency; low threshold; good thermal stability; good ultraviolet radiation resistance
Datasheet
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Supplier Information
Chengdu Xinyuan Huibo Optoelectronics Technology Co., Ltd., established in 2007, focuses on the R&D and production of laser and infrared devices. Its products are mainly applied in the laser field. The main products include laser crystals, Q-switch crystals, nonlinear crystals, detectors, and optical components. Featured products include gradient concentration crystals, highly doped crystals, strong-light-protected detectors, high damage threshold optical lenses, and narrowband filters.
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