Tm:YAP “b”切割
Tm:YAP is thulium-doped yttrium aluminate, an ideal medium for 2-micrometer solid-state laser sources. Self-quenching involving its H4 and F4 energy levels can generate two-photon excitation in the upper level, potentially providing high quantum efficiency. Absorption between H6 and H4 peaks at 795nm, well suited to high-power AlGaAS diode pumping. Its absorption peak is broader than Tm:YAG, making it suitable even with diode wavelength drift. Emission wavelength depends on crystal orientation; common cuts are along a and b.
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Overview
Tm:YAP is thulium-doped yttrium aluminate, an ideal medium for 2-micrometer solid-state laser sources. Self-quenching involving its H4 and F4 energy levels can generate two-photon excitation in the upper level, potentially providing high quantum efficiency. Absorption between H6 and H4 peaks at 795nm, well suited to high-power AlGaAS diode pumping. Its absorption peak is broader than Tm:YAG, making it suitable even with diode wavelength drift. Emission wavelength depends on crystal orientation; common cuts are along a and b.
Specifications
| Parameter | Value |
|---|---|
| Absorption Peak | 793.5nm |
| Peak Effective Pump Absorption Coefficient (4% Tm) | aa=3.3/cm |
| Peak Emission Wavelength | 1.98μm |
| Dopant Concentration | Tm: 0.2~15at% |
| Crystal Orientation | [010] or [100] (Pnma), deviation within 5° |
| Crystal Dimensions | Diameter 2~10mm, length 2~100mm; customizable to customer requirements |
| Wavefront Distortion | ≤0.125λ/25mm@632.8nm |
| Extinction Ratio | ≥25dB |
| Dimensional Tolerance | Diameter :+0.00/-0.04, Length &pλusmn;0.5mm |
| Cylindrical Processing | Fine ground or polished |
| End-Face Parallelism | ≤10" |
| End-Face Perpendicularity to Rod Axis | ≤5′ |
| End-Face Flatness | λ/8@632.8nm |
| Surface Finish | 10/5 (MIL-O-13830A) |
| Edge Bevel | 0.15±0.05mm |
| Antireflection Coating Reflectance | ≤0.25% |
| Optical Transition | ³F₄®³H₆ |
| Absorption Cross Section | 3.7~8.5 x 10⁻²¹cm² |
| Fluorescence Lifetime | 4.4~7.7ms |
| Emission Cross Section | 5~6 x 10⁻²¹cm² |
| Emission Wavelength | 1.98mm@a Axis ,1.94mm@b Axis |
| Diode Pump Wavelength | 794.8nm@a Axis ,793.5nm@b Axis |
| Space Group | D162h (Pnma) |
| Lattice Constant | a=5.307,b=7.355,c=5.176 |
| Melting Point | 1850±30 ℃ |
| Thermal Conductivity | 0.11 W·cm⁻¹·K⁻¹ |
| Coefficient of Thermal Expansion | 4.3//a,10.8//b,9.5//c |
| Density | 5.35 g/cm⁻³ |
| Refractive Index | 1.943//a, 1.952//b, 1.929//c @589nm |
| Hardness (Mohs) | 8.5-9 |
| Refractive index | 1.943//a,1.952//b,1.929//c at 0.589 mm |
Key Features
Excellent physical and chemical properties; higher laser output efficiency in the 2mm band than Tm:YAG; direct linearly polarized output; LD pump absorption bandwidth is 4nm wider than that of Tm:YAG; the 795nm pump absorption band is better matched to commonly used AlGaAs diode emission wavelengths.
Datasheet
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Supplier Information
Shanghai Blue Crystal Optoelectronic Technology Co., Ltd., established in January 2010, specializes in the R&D, production, processing, and sales of laser crystals (Nd:YAG, YAP), scintillation crystals (Ce:YAG), optical crystals, and various optical components. Located in Qingpu District, Shanghai, the company boasts a high-level scientific research and innovation team and skilled precision processing personnel. Its main business includes the production and precision micro-machining of laser crystals, scintillation crystals, optical crystals, and other optical products, which are widely applied in industrial, medical, military, and scientific research fields, providing high-quality optoelectronic functional materials and precision optical components. Adhering to the spirit of 'integrity, pragmatism, quality, and innovation', the company is committed to technological innovation and first-class service, striving to build a high-end optoelectronic components brand and become a top optical component supplier both domestically and internationally.
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