Nd:YVO4
Nd:YVO4 is a commercial diode-pumped laser crystal,especially for low/medium powers,with higher pump absorption and stimulated-emission cross-section than Nd:YAG. With LBO,BBO orKTP it supports efficient frequency conversion into near-IR,green,blue and UV solid-state lasers. It is described as replacing water-cooled ion/lamppumped lasers,particularly in compact single-longitudinal-mode systems.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Crystal Structure | Tetragonal Crystal System, Space Group D4h-I4/amd |
| Unit Cell Parameters | a=b=7.1193 Å，c=6.2892 Å |
| Density | 4.22 g/cm³ |
| Atomic Density [Nd 1.0%] | 1.26×1020 at/cm³（Nd 1.0%） |
| Mohs Hardness | 4-5 Mohs (Similar to Glass) |
| Thermal Expansion Coefficient (300K) | αa=4.43×10⁻6 /K αc=11.37×10⁻⁶ /K |
| Thermal Conductivity (300K) | //C：5.23 W/m/K ⊥C:：5.10 W/m/K |
| Laser Wavelength | 1064 nm，1342 nm |
| Thermo-Optic Coefficient (300K) | dno/dT=8.5×10⁻⁶ /K dne/dT=2.9×10⁻⁶ /K |
| Stimulated Emission Cross Section [1064 nm] | 25×10-19 cm² @ 1064 nm |
| Fluorescence Lifetime [1% Nd Doping] | 90 μs (1% Nd Doping) |
| Absorption Coefficient [810 nm] | 31.4 cm⁻¹ @ 810 nm |
| Intrinsic Loss [1064 nm] | 0.02 cm⁻¹ @ 1064 nm |
| Gain Bandwidth [1064 nm] | 0.96 nm @ 1064 nm |
| Polarized Laser Radiation | π Polarization; Parallel to the Optical Axis (c Axis) |
| Optical-to-Optical Conversion Efficiency | ＞60% |
| Sellmeier Equation (λ in µm) | no2 = 3.77834 + 0.069736 / (λ²- 0.04724) - 0.010813 λ² ne2 = 4.59905 + 0.110534 / (λ² - 0.04813) - 0.012676 λ² |
| Dimensional Tolerance | （W±0.1 mm）×（H±0.1 mm）×（L+0.5/-0.1 mm） （L≥2.5 mm） （W±0.1 mm）×（H±0. 1 mm）×（L+0.1/-0.1 mm） （L＜2.5 mm） |
| Effective Clear Aperture [Central Region] | Central 90% Area |
| Surface Finish [With Reference to Standard MIL-PRF-13830B] | 10/5, with Reference to Standard MIL-PRF-13830B |
| Flatness [633 nm] | ≤λ/8 @ 633 nm （L≧2.5 mm） ≤λ/4 @ 633 nm （L＜2.5 mm） |
| Transmitted Wavefront Distortion [633 nm] | ≤λ/4 @ 633 nm |
| Parallelism | 20″ |
| Perpendicularity | ≤15′ |
| Angle Tolerance | ≤0.5° |
| Chamfer [45°] | ≤0.2 mm×45° |
| Edge Chipping | ≤0.1 mm |
| Damage Threshold [1064nm; 10ns; 10Hz; antireflection coating] | ＞1 GW/cm2 @ 1064 nm, 10 ns, 10 Hz( Antireflection Coating ) |
| Doping Concentration Range | 0.1-3% |
| Concentration Control Accuracy [at.%＜1%] | ±0.05% |
| Concentration Control Accuracy [at.%≥1%] | ±0.1% |
| Maximum Crystal Dimensions | ϕ20x40 mm3 |
| Available Coatings [Coating Options on This Page; S1/S2/S3 Retained in Full from Source] | Two polished faces: AR/AR-1064/808 nm, R<0.2%@1064nm and R<0.5%@808nm, or R<0.1%@1064nm and R<3%@808nm |
| Available Coatings [Coating Options on This Page; S1/S2/S3 Retained in Full from Source] | S1：HR-1064/532 nm，HT-808 nm，R＞99.8% @ 1064/532 nm，T＞90% @ 808 nm S2：AR-1064/532 nm，R＜0.2% @ 1064nm，R＜0.5% @ 532 nm |
| Available Coatings [Coating Options on This Page; S1/S2/S3 Retained in Full from Source] | S1：HR-1064 nm，HT-808 nm，R＞99.8% @ 1064 nm，T＞95% @ 808 nm S2：AR-1064 nm，R＜0.1% @ 1064 nm |
| Available Coatings [Coating Options on This Page; S1/S2/S3 Retained in Full from Source] | S1 and S2: antireflection coatings; S3: protected gold/chromium coating |
| Available Coatings [Coating Options on This Page; S1/S2/S3 Retained in Full from Source] | Two polished faces: AR/AR-1064 nm; S3: AR-808 nm |
Applications
Key Features
Datasheet
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Supplier Information
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