Medical-Aesthetic Semiconductor Laser Module:WR-12-3W
The WR-12-3W introduction describes a compact2.5 W semiconductor laser module operating at1460 nm. A1×12 scanned spot array provides precise,uniform energy output for wrinkle reduction and skin rejuvenation. The source feature list separately states3 W average output,1460±20 nm center wavelength,a1×12 array with200×200 μm spots,1 mm spot spacing,11 mm array length,and up to30 mJ per spot. Compact,durable construction provides long life; recommended heat-dissipation capability is≥8 W.
Specification Snapshot
Center Wavelength
min:1440 nm; typical:1460 nm; max:1480 nm
Operating Temperature
min:20 ℃; max:30 ℃
Storage Temperature
min:-40 ℃; max:55 ℃
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Overview
The WR-12-3W introduction describes a compact2.5 W semiconductor laser module operating at1460 nm. A1×12 scanned spot array provides precise,uniform energy output for wrinkle reduction and skin rejuvenation. The source feature list separately states3 W average output,1460±20 nm center wavelength,a1×12 array with200×200 μm spots,1 mm spot spacing,11 mm array length,and up to30 mJ per spot. Compact,durable construction provides long life; recommended heat-dissipation capability is≥8 W.
Specifications
| Parameter | Value |
|---|---|
| Spot Count | typical:1×12 |
| Array Dimensions(Length×Width) | typical:11mm |
| Spot Spacing | typical:1 mm |
| Spot Size | typical:200 um × 200 um |
| Spot Energy(High Setting) | typical:30 mJ |
| Scan Period | typical:500 ms |
| Average Output Power | typical:3 W |
| Center Wavelength | min:1440 nm; typical:1460 nm; max:1480 nm |
| Spectral Full Width at Half Maximum FWHM | typical:7 nm; max:11 nm |
| Operating Current Iop | typical:6.2 A; max:7 A |
| Threshold Current Ith | typical:0.5 A; max:0.7 A |
| Operating Voltage Vop | typical:1.8 V |
| Operating Temperature | min:20 ℃; max:30 ℃ |
| Operating Relative Humidity | max:75 % |
| Storage Temperature | min:-40 ℃; max:55 ℃ |
| Storage Relative Humidity | min:5 %; max:85 % |
| Recommended Heat Dissipation Capacity | typical:≥8 W |
Applications
Wrinkle reduction; skin rejuvenation.
Datasheet
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Supplier Information
Shenzhen Vivlaser Technology Co., Ltd. (Vivlaser) was founded in 2017 and is a domestic enterprise focusing on the R&D and manufacturing of semiconductor lasers and related laser light source products. In 2018, the company took the lead in launching the 878.6nm wavelength-locked narrow-spectrum pump source in China, achieving localization of this type of product and breaking the long-term dominance of overseas suppliers. Currently, the company's product matrix covers: semiconductor pump sources, high-power semiconductor lasers, 450nm blue lasers, violet lasers, and medical aesthetic laser modules.
Vivlaser is a national high-tech enterprise, a specialized and sophisticated SME, and an innovative SME, and has passed ISO 9001 quality management system certification.
The company has R&D and production bases in Shenzhen and Taizhou, with a total area of over 10,000 square meters, including approximately 3,500 square meters of Class 1,000 cleanrooms. It currently has 158 employees and an annual production capacity of over 100,000 semiconductor laser units, serving laser equipment companies, industrial customers, and system integrators.
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