Integrated Solar Cell for Satellites (144x65.5mm)
Satellite integrated solar cells, also called connector-integrated unit cells, add coverglass and interconnectors to solar cells with 30%-34% efficiency. Product specifications follow the individual cells, and all materials and components meet space requirements.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Base Material | GaInP / GaAs / Ge on Ge substrate |
| AR-coating | TiOx / Al2O3 |
| Dimensions | (144.75±0.1) × (66.65±0.1) |
| Cell Area | 77.26 cm² |
| Weight | 116±15 mg/cm² |
| Thickness [Without contacts] | 0.34±0.1 mm |
| Coverglass type | KFB 120 |
| Coverglass thickness | 120±20 µm |
| Interconnectors [3× front side / 1× diode] | Kovar, silver coated |
| Interconnector thickness | 25 µm |
| Dimension (interconnector) | (7.5±0.1) × (6.3±0.1) |
| Bypass protection | External Si diode |
| Average Open-Circuit Voltage V_oc | 2730 mV |
| Average Short-Circuit Current I_sc | 1315 mA |
| Voltage at Max. Power V_m | 2400 mV |
| Current at Max. Power I_m | 1280 mA |
| Average Efficiency [1353 W/m²] | 29.5 % |
| I_m/I_m0 [Radiation degradation；column 1E14] | 0.99 |
| V_m/V_m0 [Radiation degradation；column 1E14] | 0.96 |
| P_m/P_m0 [Radiation degradation；column 1E14] | 0.95 |
| I_m/I_m0 [Radiation degradation；column 5E14] | 0.97 |
| V_m/V_m0 [Radiation degradation；column 5E14] | 0.93 |
| P_m/P_m0 [Radiation degradation；column 5E14] | 0.9 |
| I_m/I_m0 [Radiation degradation；column 1E15] | 0.93 |
| V_m/V_m0 [Radiation degradation；column 1E15] | 0.92 |
| P_m/P_m0 [Radiation degradation；column 1E15] | 0.85 |
| External Si protection diode forward voltage V_forward [1.5 A] | ≤1 V |
| External Si protection diode reverse current I_reverse [4 V] | ≤200 µA |
| Operation Temperature | −150 to +250 |
| Temperature gradient – Short Circuit [BOL] | 11 µA/(cm²·°C) |
| Temperature gradient – Open Circuit [BOL] | -5.9 mV/°C |
| Temperature gradient – Current at Max. Power [BOL] | 9 µA/(cm²·°C) |
| Temperature gradient – Voltage at Max. Power [BOL] | -6 mV/°C |
| Temperature gradient – Short Circuit [5E14] | 10 µA/(cm²·°C) |
| Temperature gradient – Open Circuit [5E14] | -6.1 mV/°C |
| Temperature gradient – Current at Max. Power [5E14] | 9.5 µA/(cm²·°C) |
| Temperature gradient – Voltage at Max. Power [5E14] | -6.2 mV/°C |
| Temperature gradient – Short Circuit [1E15] | 13 µA/(cm²·°C) |
| Temperature gradient – Open Circuit [1E15] | -6.3 mV/°C |
| Temperature gradient – Current at Max. Power [1E15] | 15 µA/(cm²·°C) |
| Temperature gradient – Voltage at Max. Power [1E15] | -6.5 mV/°C |
| Absorptivity [Threshold value] | ≤0.92 |
| Pull Test [45°；threshold value] | ≥0.83 N/mm² |
| Status | Qualified |
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Key Features
Datasheet
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