High power 20mW 1.3μm Band laser device for Laser source
Based on InGaAs wafer material, the semiconductor laser diodes from Szsbksgdkjyxgs cover wavelengths from 635nm to 1660nm.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Center Wavelength λc [TL=15～35℃ CW] | min:1308 nm；typical:1310 nm；max:1312 nm |
| Peak Operating Power Po | min:18 mW；max:20 mW |
| Bandwidth BW [@-3dB] | typical:2.5 GHz |
| Threshold Current ITH | typical:10 mA；max:35 mA |
| Operating Current Iop [PO= 20 mW(CW)] | typical:200 mA；max:300 mA |
| TEC set temperature Ts | min:15 ℃；max:35 ℃ |
| Monitor dark current ID | max:0.1 μA |
| TEC Current ITEC [TL = 25°C, TC = 70°C] | max:1.5 A |
| TEC Voltage VTEC [TL = 25°C, TC = 70°C] | max:3.5 V |
Applications
Key Features
Datasheet
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Supplier Information
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