850nm 10mW VCSEL Diode
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Specifications
| Parameter | Value |
|---|---|
| Output Power Po [25℃ Laser temperature / I_F = 11mA] | typical:10 mW |
| Threshold Current ITH [25℃ Laser temperature] | typical:1.1 mA |
| Slope η [25℃ Laser temperature] | typical:1.01 W/A |
| Power Conversion Efficiency PCE [25℃ Laser temperature] | typical:38 % |
| Center Wavelength λ_P [25℃ Laser temperature / P_O = 10mW] | min:840 nm；typical:850 nm；max:860 nm |
| Laser Forward Voltage V_F [25℃ Laser temperature / I_F = 11mA] | typical:2.5 V；max:2.7 V |
| Series resistance R_S [25℃ Laser temperature / I_F = 11mA] | typical:60 Ω |
| Emission area [25℃ Laser temperature] | typical:Φ12 |
| Beam divergence -( 1/e^2) θ [25℃ Laser temperature / I_F = 11mA / 1/e^2] | typical:20 Deg. |
| Beam divergence -FWHM θ [25℃ Laser temperature / FWHM] | typical:16 Deg. |
| Wavelength shift ∂λ_P /∂T [25℃ Laser temperature / I_F = 11mA] | max: 0.07 |
Applications
Key Features
Datasheet
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Supplier Information
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