850nm 10mW VCSEL Diode
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Specifications
| Parameter | Value |
|---|---|
| Storage temperature Ts [Absolute Maximum Ratings] | min:-40 °C；max:85 °C |
| Operating case temperature T_OP [Absolute Maximum Ratings] | min:-40 °C；max:70 °C |
| Laser reverse Voltage V_LR [Absolute Maximum Ratings] | max:5 V |
| Max. Continuous current I_MAX [Absolute Maximum Ratings] | max:20 mA |
| ESD exposure (Human body) model V_TEC [Absolute Maximum Ratings] | max:2k-4k(Class 2) |
| Optical output power Po [25°C laser temperature / I_F = 11mA] | typical:10 mW |
| Threshold current I_TH [25°C laser temperature] | typical:1.1 mA |
| Slope efficiency η [25°C laser temperature] | typical:1.01 W/A |
| Power conversion efficiency PCE [25°C laser temperature] | typical:38 % |
| Center wavelength λ_P [25°C laser temperature / P_O = 10mW] | min:840 nm；typical:850 nm；max:860 nm |
| Laser forward voltage V_F [25°C laser temperature / I_F = 11mA] | typical:2.5 V；max:2.7 V |
| Series resistance Rs [25°C laser temperature / I_F = 11mA] | typical:60 Ω |
| Emission area [25°C laser temperature] | typical:Φ12 |
| Beam divergence (1/e^2) θ [25°C laser temperature / I_F = 11mA] | typical:20 Deg. |
| Beam divergence FWHM θ [25°C laser temperature] | typical:16 Deg. |
| Wavelength shift ∂λ_P/∂T [25°C laser temperature / I_F = 11mA] | max:0.07 nm/°C |
| Soldering temperature [25°C laser temperature / FeNi Alloy] | max:260(10s) |
Applications
Key Features
Datasheet
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