830nm 2W 62.5um Semiconductor laser for thermal printing
The 2W 830nm infrared diode laser offers high stability, low noise, FDA compliance, an ultracompact design, long service life and low cost.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Output Power Pₒᵤₜ | typical:2.0 W |
| Effective wavelength range λ | min:820 nm；typical:830 nm；max:840 nm |
| Spectral Width Δλ [@FWHM] | typical:3.0 nm；max:6.0 nm |
| Threshold Current Ith | typical:0.25 A；max:0.4 A |
| Operating Current Iₒₚ | typical:2.3 A；max:2.5 A |
| Forward Voltage V_f | typical:1.9 V；max:2.2 V |
| Power Conversion Efficiency | typical:43% |
| Slope efficiency η | typical:0.95 W/A |
| Wavelength Temperature Coefficient Δλ/ΔT | typical:0.28 nm/℃ |
| Core/cladding diameter D_COR | typical:62.5/125 |
| Optical fiber Numerical aperture NA | typical: 0.14 |
Applications
Key Features
Datasheet
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Supplier Information
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