For hydrogen fluoride detection 1273nm InGaAs TO39 Packaged laser
The 1273nm InGaAs quantum-well semiconductor laser offers high reliability and fully hermetic packaging.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Peak Output Power P_O [CW] | min:3 mW；typical:5 mW |
| Threshold Current I_TH [CW] | typical:12 mA；max:18 mA |
| Operating Current Iₒₚ [CW, 5mW] | max:80 mA |
| Operating Voltage Vₒₚ [CW, 5mW] | typical:1.5 V；max:2.0 V |
| Slope efficiency ƞ [CW, 5mW] | min:0.05 mW/mA；typical:0.1 mW/mA |
| Operating Wavelength λp [CW, 5mW@25℃] | min:1271.5 nm；typical:1273 nm；max:1274.5 nm |
| Slope efficiency SMSR [CW] | min:35 dB |
| Spectral Width (20dB) [CW, 5mW / 20dB] | typical:0.2 nm |
| Wavelength Temperature Coefficient Δλ/ΔT [TEC Temperature 15℃-35℃] | typical:0.1 nm/℃ |
| Wavelength current coefficient Δλ/ΔΙ | typical:0.01 nm/mA |
| Thermistor Rth [Ttherm = 25℃] | min:9.5 kΩ；typical:10 kΩ；max:10.5 kΩ |
Applications
Key Features
Datasheet
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Supplier Information
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