808nm 1W TO5 Package IR Laser
808nm 1000mW infrared laser diode with high output power.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Output Power (CW) P_O | min:0.9 W；typical:0.95 W |
| Center Wavelength λ_C | typical:808 nm |
| Operating Current Iₒₚ | min:0.9 A；typical:1.0 A；max:1.1 A |
| Operating Voltage Vₒₚ | typical:1.85 V；max:2.20 V |
| Divergence angle θ _⊥ ×θ _∥ | max:40 ° × 11 ° |
| Operating Temperature T_W | typical:25 ℃；max:40 ℃ |
| Storage temperature T_S | min:-40 ℃；max:80 ℃ |
| Package | TO5 and9mm |
Applications
Key Features
Datasheet
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Supplier Information
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