Semiconductor optical amplifier chip (SOA-COC)
100% independently controlled chip design and fabrication processes provide a preferred domestic replacement. Components include an SOA chip, a thermistor bonded to AlN, and an AlN heat sink measuring 2mm*1.1mm*0.45mm or customized to requirements. Chip structure and heat-sink dimensions are shown in the accompanying diagram. For series SLD and pump-source chip specifications, refer to the module parameters or discuss individual requirements with the company.
Specification Snapshot
Noise Figure NF [Room temperature ,BOL / CW;lSOA=120mA; TSET=40℃]
max:7.0 dB
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Overview
100% independently controlled chip design and fabrication processes provide a preferred domestic replacement. Components include an SOA chip, a thermistor bonded to AlN, and an AlN heat sink measuring 2mm*1.1mm*0.45mm or customized to requirements. Chip structure and heat-sink dimensions are shown in the accompanying diagram. For series SLD and pump-source chip specifications, refer to the module parameters or discuss individual requirements with the company.
Specifications
| Parameter | Value |
|---|---|
| Operating Center Wavelength λC [Room temperature ,BOL / 850 Wavelength band] | min:810 nm;max:880 nm |
| Operating Center Wavelength λC [Room temperature ,BOL / 1050 Wavelength band] | min:1010 nm;max:1080 nm |
| Operating Center Wavelength λC [Room temperature ,BOL / O Wavelength band] | min:1260 nm;max:1330 nm |
| Operating Center Wavelength λC [Room temperature ,BOL / S+C+L Wavelength band] | min:1500 nm;max:1600 nm |
| Die operating temperature Tc [Room temperature ,BOL] | min:20 °C;max:75 °C |
| Reverse voltage VR [Room temperature ,BOL] | max:2 V |
| ESD threshold (HBM) ESDTH [Room temperature ,BOL / HBM] | min:2000 V |
| Input Optical power PIN(MAX) [Room temperature ,BOL] | typical:+13 dBm |
| SOA temperature-control temperature TSET [Room temperature ,BOL / CW] | typical:25 °C |
| SOA Operating Current lSOA [Room temperature ,BOL / CW] | max:500 mA |
| SOA Operating Voltage VF [Room temperature ,BOL / CW;lSOA=120mA; TSET=25℃] | max:2.0 V |
| ASE optical output power (single-sided) PASE [Room temperature ,BOL / CW;lSOA=120mA;TSET=25℃] | min:1.0 mW |
| Small-signal gain G [Room temperature ,BOL / CW;ISOA=120mA;TSET=25℃;PIN=-25dBm] | min:15 dB;max:22 dB |
| Small-signal gain G [Room temperature / CW;lSOA=120mA;TSET=25℃;PIN=-25dBm;EOL] | min:14 dB;max:23 dB |
| Saturated output power Ps [Room temperature ,BOL / CW;ISOA=120mA; TSET=25℃] | min:7.0 dBm |
| Polarization-dependent gain PDG [Room temperature ,BOL / CW;lSOA=120mA; TSET=25℃] | max:1.5 dB |
| Noise Figure NF [Room temperature ,BOL / CW;lSOA=120mA; TSET=40℃] | max:7.0 dB |
Key Features
Covers the 850/1050/1310/1550nm bands, with customizable chips and integrated designs. Chip products available with different saturated output powers, center wavelengths and spectral widths. Semiconductor-amplifier chips are available sintered onto special heat sinks. Vacuum or nitrogen-filled sealed packaging protects products during transportation and storage.
Datasheet
Product Datasheet
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Supplier Information
Xiamen Hengguang Xinrui Technology Co., Ltd., founded in 2019, is a national high-tech enterprise and provincial-level specialized and sophisticated SME. The company focuses on semiconductor photonic chip technology, developing and manufacturing high-performance optoelectronic chips and modules for optical communication, fiber sensing, optical measurement, fiber optic gyroscopes, and medical OCT. It has established a complete fiber-coupled packaging and testing line for optoelectronic devices and offers multiple product series including SLD, SOA, and 9xx nm pump lasers. These products have been maturely applied in aerospace, fiber communication, fiber sensing, current transformers, and optical coherence tomography. The company has obtained ISO9001, ISO14001, and ISO45001 certifications and operates a joint laboratory with the Institute of Semiconductors, Chinese Academy of Sciences.
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