BBO Pockels cell
The BBO (BaB₂O₄) Pockels cell, or barium borate Pockels cell, offers good overall performance, with a high damage threshold, low insertion loss, a high extinction ratio, minimal piezoelectric ringing and competitive cost. BBO cells offer significant advantages in laser-power handling, temperature stability and near-immunity to piezoelectric ringing. They are attractive for high-repetition-rate Q-switching, pulse picking up to 3 MHz, laser cavity dumping, regenerative-amplifier control and beam chopping. In high-repetition-rate and high-power applications, BBO is preferable to KDP. Its low piezoelectric coupling permits pulse repetition rates of several hundred kilohertz.
Save to Favorites
Overview
Specifications
| Parameter | Value |
|---|---|
| Optical transmission | >98% |
| Damage threshold [@10ns 1064nm] | 500MW/cm²@10ns 1064nm |
| Wavefront distortion [@1064nm] | <λ/8 @1064nm |
| Typical Capacitance | <3pF |
| Dimensions | φ25.4×44mm |
| Quarter Wave Voltage | 3.4kv |
| Crystal Structure | Trigonal, space group R3c, point group 3m |
| Unit-cell parameters | a=b=12.532Å,c=12.717Å,Z=6 |
| Melting point | 1095±5℃ |
| Phase-transition point | 925±5℃ |
| Optical homogeneity | δn～10⁻⁶cm |
| Mohs hardness | 4 |
| Density | 3.85g/cm³ |
| Hygroscopicity | Low |
| Coefficient of thermal expansion | a:4×10⁻⁶K，c:36×10⁻⁶K |
| Thermal conductivity | ⊥C:1.2W/m/k , ∥C:1.6W/m/K |
| Absorption coefficient [@1064nm] | <0.1%/cm @1064nm |
| Transparency range | 189-3500nm |
| Refractive Index | 1064nm nₒ=1.6545,nₑ=1.5392 |
| Refractive Index | 800nm nₒ=1.6606,nₑ=1.5444 |
| Refractive Index | 532nm nₒ=1.6742,nₑ=1.5547 |
| Refractive Index | 400nm nₒ=1.6930,nₑ=1.5679 |
| Thermo-optic coefficient dnₒ/dT | dnₒ/dT=-9.3×10⁻⁶/℃ |
| Thermo-optic coefficient dnₑ/dT | dnₑ/dT=-16.6×10⁻⁶/℃ |
| Electro-optic coefficient | γ₁₁=2.7pm/V,γ₂₂,γ₃₁<0.1γ₁₁ |
| Half-Wave Voltage [@1064nm] | 48KV @1064nm |
| NLO coefficient d₁₁ | d₁₁=5.8×d₃₆(KDP) |
| NLO coefficient d₃₁ | d₃₁=0.05×d₁₁ |
| NLO coefficient | d₂₂<0.05×d₁₁ |
| Phase-matching SH wavelength | 189-3500nm |
Key Features
Datasheet
Supplier Information
Related Products
-
Electro Optic Q Switch / Pockels Cell (Pockels Cells) CdTe IRX Series Mid Infrared Pockels Cell
Electro-Optics
Antelaser
Wavelength / 0.2-1.65: 5-12um Electricity Extinction Ratio / >500:1 @1064 [@1064nm]: >500:1 @10.6um Valid aperture / 3.25: 3-7,4x10mm
-
Electro Optic Q Switch / Pockels Cell (Pockels Cells) IMPACT Series Pockels Cell
Electro-Optics
Antelaser
Wavelength / 0.2-1.65: 300-1100nm Electricity Extinction Ratio / >500:1 @1064 [@1064nm]: >2000:1@1064nm Valid aperture / 3.25: 8-13mm
-
Electro Optic Q Switch / Pockels Cell (Pockels Cells) QX1014A Short Path Pockels Cell
Electro-Optics
Antelaser
Wavelength / 0.2-1.65: 300-1100nm Electricity Extinction Ratio / >500:1 @1064 [@1064nm]: >450:1 Crystal Material / BBO: KD*P
-
Electro Optic Q Switch / Pockels Cell (Pockels Cells) TX Series Pockels Cell
Electro-Optics
Antelaser
Wavelength / 0.2-1.65: 300-1300nm Electricity Extinction Ratio / >500:1 @1064 [@1064nm]: Changed Valid aperture / 3.25: 19.5-99mm
-
Transmissive Spatial Light Modulator
Electro-Optics
Antelaser
Retarder Material: Nematic liquid crystal Substrate Material: Optical quality synthetic fused Center Wavelength: 450-1800nm(Specify)
Related Articles
As a professional ultraviolet‑laser solution provider, Precilasers has launched its 266 nm narrow‑linewidth industrial laser, delivering reliable single‑frequency output for high‑precision interference lithography, semiconductor inspection and precision metrology applications.
On November 28, 2024, the 3rd China Laser Star Enterprise Summit & Advanced Laser Processing Technology Summit, an annual influential event in the laser industry, was grandly held in Wuhan Optics Valley.
Within cutting‑edge ultrafast photonics research, asynchronous optical sampling (ASOPS) and synchronous sampling serve as fundamental technologies for terahertz excitation detection, coherent Raman imaging and other time‑resolved spectroscopy experiments.
A laser bar is an array semiconductor laser chip integrated with dozens of emitters, which realizes hundred-watt quasi-continuous output on a single chip. With regular emitter arrangement and controllable fill factor, integrated thermal design and superior wall-plug efficiency compared to single chips, it acts as the core light source for high-power pumping, medical lasers and precision processing.
Loading...
Name
Phone
Organization
Use Case
Database Platform