CdTe Electro-Optic Crystal
CdTe (cadmium telluride) is an important II-VI semiconductor with a direct bandgap, high absorption coefficient and good optoelectronic properties. Widely used in infrared optics and photovoltaics, it is suitable for high-efficiency solar cells, infrared detectors and X-ray detectors.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Chemical formula | CdTe |
| Crystal Structure | Cubic Crystal System |
| Unit Cell Parameters a | a=6.48 Å |
| Refractive index n [@10.6 μm; customizable measured wavelength; @10.6 μm)] | n≈2.7（@10.6 μm） |
| Mohs Hardness | 2.5 Mohs |
| Thermal conductivity [Room temperature] | ≈6.3 W/m·K |
| Melting point | 1092℃ |
| Density | 5.85 g/cm³ |
| Thermal Expansion Coefficient [Room temperature] | ≈5.9×10⁻⁶/℃ |
| Absorption bandwidth [Absorption Edge in the Infrared] | Bandgap 1.44 eV (corresponding wavelength ~860 nm) |
| Large size | Diameter 50 mm or Custom |
| Dimensional tolerance - Diameter Tolerance [Customization Supported] | ±0.1 mm, Customization Supported |
| Dimensional tolerance - Thickness tolerance [Customization Supported] | ±0.05 mm, Customization Supported |
| Surface finish [Applicable Standard: MIL-PRF-13830B] | 20/10(Applicable Standard: MIL-PRF-13830B) |
| Flatness [@633 nm] | ≤λ/8 @633 nm |
| Parallelism | 20″ |
| Perpendicularity | ≤10′ |
| Chamfer | ≤0.25mm × 45° |
| Edge chipping | ≤0.15 mm |
Applications
Key Features
Datasheet
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Supplier Information
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