Board-Level Photodetector Module 350nm~1100nm, Silicon (Si), Amplified Adjustable Gain PDAPC1(DP)
Specification Snapshot
Operating temperature
10~40℃
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Specifications
| Parameter | Value |
|---|---|
| Photosensitive Range | 350~1100nm |
| Photosensitive Area Dimensions | 3.6mmX3.6mm |
| Response Time Constant | 30ns |
| Responsivity [@980nm] | 0.74A/W@980nm |
| Bandwidth Range | DC~12MHz |
| Gain range [Hi-Z Load] | 1.51kV/A~4.75MV/A |
| Gain range [50Ω Load] | 0.75kV/A~2.38MV/A |
| Signal amplitude [Hi-Z Load] | 0~10V |
| Signal amplitude [50Ω Load] | 0~5V |
| Gain adjustment Method | DIP-switch and programmable gain adjustment: 0~70dB in 10dB steps, with 8 settings. Bandwidth is inversely proportional to gain. |
| Photosensitive surface Depth | 0.06"(1.5mm) |
| Detector Net weight | 8g |
| Operating temperature | 10~40℃ |
| Storage temperature | -20~70℃ |
| Overall dimensions | (37.3mmX37.3mmX15.8mm) |
| NEP | 3.25~75.7 pW/Hz^1/2 |
| Power input interface | Pin Header |
| Signal interface | MMCX straight female connector |
| Gain adjustment | DIP-switch gain adjustment and programmable gain adjustment |
Datasheet
Product Datasheet
PDF
Supplier Information
Focusing on the R&D and industrialization of high-end optoelectronic instruments, continuously promoting breakthroughs and implementation of optoelectronic technology.
With spectral technology as its core, the company has built a complete product system covering detectors, lasers, precision optical measurement and other fields, with industry-leading technical indicators, while providing high-quality products and professional technical support to spectral developers.
The company is committed to serving national strategies and cutting-edge science and technology. Its high-end instruments and customized solutions have been deeply applied in quantum optics, fusion energy, large-scale scientific facilities and other advanced research and future industrial fields.
Adhering to the philosophy of "technological innovation, quality-oriented", DoSpectrum Optics is continuously promoting breakthroughs and industrialization of optoelectronic technology.
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