Nd:YVO4 (NYV-07-333-C6/C2)
Specification Snapshot
Pump Wavelength
808 nm
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Specifications
| Parameter | Value |
|---|---|
| Orientation | A-CUT +/-0.5 ° |
| Size&Tolerance | W(+/-0.1)*H(+/-0.1)*L(+0.5/-0.1)mm |
| Surface quality | 10/5 |
| Perpendicularity | ≤5 ′ |
| Parallelism | ≤10 ″ |
| Bevel [45°] | <0.2 mmx45 ° |
| Flatness (λ) [633nm] | λ/10@633 nm |
| Chips | <0.1 mm |
| TWD (λ) [633nm] | λ/6@633 nm |
| CA | ≥95 % |
| Doping | 0.7 % |
| Cut Angle | A-CUT |
| Size | 3 mm × 3 mm × 3 mm |
| Coating [1064&532&HT@808nm S2:AR@1064&532nm] | S1:HR@1064&532&HT@808 nm S2:AR@1064&532 nm |
| Crystal Structure | Tetragonal System |
| Space Group | I41/amd |
| Lattice Constants | a=b=0.71183 nm, c=0.62932 nm。 |
| Melting Temperature | 1825 ℃ |
| Density | 4.22 g/cm3 |
| Thermal Conductivity [<100>(a)] | 0.0510 W/cmK |
| Thermal Conductivity [<001>(c)] | 0.0523 W/cmK |
| Thermal Expansion@25℃ | αa=4.43 ×10-6 /K αc=11.37 ×10-6 /K |
| Mohs hardness | 4-5 |
| Index of Refraction (no) | 1.958 |
| Index of Refraction (ne) | 2.168 |
| Thermal Optical Coefficient (dna/dT) | 8.5×10-6 /K |
| Thermal Optical Coefficient (dnc/dT) | 3.0×10-6 /K |
| lasing wavelength | 1064 nm, 1342 nm, 914 nm |
| Pump Wavelength | 808 nm |
| Emission Cross section @1064nm | 25 ×10-19cm2 |
| absorption cross section @ 808nm [808nm; 1 at% Nd3+] | 2.7×10-19cm2 (1 at% Nd3+) |
| absorption coefficient@808nm [808nm; E∥C] | 30.6 /cm |
| absorption coefficient@808nm [808nm; E⊥C] | 11.4 /cm |
| Intrinsic loss [1064nm] | 0.02 cm-1 @1064 nm |
| Gain bandwidth [1064nm] | 0.96 nm@1064 nm |
| Polarization | E∥C (parallel to C axis, π polarization) |
| Fluorescent lifetime [1% Nd doping] | 90 μs (1 % Nd doping) |
| Sellmeier Equation | n02=3.77834+0.069736/(λ2-0.04724)-0.010813λ2 |
| Sellmeier Equation | ne2=4.59905+0.110534/(λ2-0.04813)-0.012676λ2 |
Applications
Industrial Laser;Medical Laser;Laser show system;Mainly used for end-pumped CW and QCW low and medium power solid state lasers.
Key Features
Various doping concentration from 0.1% to 3%;Doping concentration tolerance: ±0.05%(atm%<1%), ±0.1%(atm%≥1%);Low lasing threshold and high slope efficiency;Large stimulated emission cross-section at lasing wavelength;High absorption over a wide pumping wavelength bandwidth;uniaxial and large birefringence, emits polarized laser;Low dependency on pumping wavelength and easy to get single mode output
Datasheet
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Supplier Information
CRYSTECH Inc. was established in the beautiful coastal city of Qingdao in 2001. We take "serving the progress of laser technology and promoting the development of laser industry" as our mission, and engage in the Research and Development, Production, and Sales of laser crystals, Q-switches, Nonlinear optical crystals, Laser optical components, and related laser devices. It has now become a world’s leading manufacturer of core components for solid-state lasers. Our products are widely used in various fields such as medical and aesthetics lasers.
CRYSTECH has modern offices and production plants with a total area of more than 8000 square meters. We passed ISO9001 Quality Management System certification in 2006. The Quality Management System has been implemented in all departments from R&D to production, from pre-sales to after-sales, covering the whole processes from company management to customer satisfaction.
As a world-renowned laser components manufacturer, we provide one-stop solutions for core components of solid-state lasers. CRYSTECH’s main products cover eight categories: Laser crystals, Q- switches, Nonlinear crystals, 1535nm bonding crystals, Laser optical components, Laser modules, Laser cavities, and Laser handpieces. Among them, the most representative products include Alexandrite rods, Nd:YAG rods, RTP Q-Switch, KD*P Pockels Cells, KTP crystals, 1535nm bonding crystals, Cell Mirrors, Polarizers, 755nm long pulse laser module, Ceramic reflector and Dye Handpiece, etc.
CRYSTECH supports and serves customers, and creates value for them. We are willing to develop and progress together with our customers.
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