GHCT-SW1280-U3 / 10GigE / CL

GHCT-SW1280-U3 / 10GigE / CL

Supplier
Ghopto
Part Number
GHCT-SW1280-U3
Category
Infrared Imaging
Origin
China

国惠光电's new SWIR-1280 cameras use independently developed technology for 1280×1024 resolution, 15μm pixels and excellent sensitivity over 900–1700nm. USB3.0/GigE/CameraLink interfaces suit varied applications. Built-in TE cooling reduces dark current; low read noise improves imaging SNR. Multistage gain adjustment and real-time nonuniformity correction support high-quality low-light/night imaging and imaging through haze. A compact, lightweight design integrates into UAVs, shipboard platforms and airborne electro-optical pods. Industrial uses include semiconductor-wafer inspection, security monitoring and hyperspectral imaging.

Specification Snapshot
Dynamic Range [LG; No Corresponding Explanation for *1 in Source Table]
70.59dB
Dynamic Range [MG; No Corresponding Explanation for *1 in Source Table]
67.96dB
Dynamic Range [HG; No Corresponding Explanation for *1 in Source Table]
47.98dB
Data Interface
USB 3.0
Digital I/O
1 Optically Isolated Input, 1 Optically Isolated Output, 2 Non-Isolated Input/Output Ports
Data Format
Mono 8 / Mono 14 / Packet12
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Overview

国惠光电's new SWIR-1280 cameras use independently developed technology for 1280×1024 resolution, 15μm pixels and excellent sensitivity over 900–1700nm. USB3.0/GigE/CameraLink interfaces suit varied applications. Built-in TE cooling reduces dark current; low read noise improves imaging SNR. Multistage gain adjustment and real-time nonuniformity correction support high-quality low-light/night imaging and imaging through haze. A compact, lightweight design integrates into UAVs, shipboard platforms and airborne electro-optical pods. Industrial uses include semiconductor-wafer inspection, security monitoring and hyperspectral imaging.

Specifications

ParameterValue
Dynamic Range [LG; No Corresponding Explanation for *1 in Source Table]70.59dB
Dynamic Range [MG; No Corresponding Explanation for *1 in Source Table]67.96dB
Dynamic Range [HG; No Corresponding Explanation for *1 in Source Table]47.98dB
Readout Noise [LG]586.82e
Readout Noise [MG]35.05e
Readout Noise [HG]68.44e
Max Signal-to-Noise Ratio [LG]62.98dB
Max Signal-to-Noise Ratio [MG]49.43dB
Max Signal-to-Noise Ratio [HG]42.34dB
Exposure Time Range16us~1s
Data InterfaceUSB 3.0
Digital I/O1 Optically Isolated Input, 1 Optically Isolated Output, 2 Non-Isolated Input/Output Ports
Data FormatMono 8 / Mono 14 / Packet12
SoftwareComplete SDK Development Package
DetectorInGaAs Sensor
Spectral Range900nm-1700nm
Spectral Response1280x1024
Pixel Size15μm
Image Sensor Format1.5”
ADC14bit
Frame Rate [1280 x 1024]100fps@ 1280 x 1024
Memory512MB
QE [1.55μm; No % Explicitly Given in Original Table]≥70
Conversion Gain [LG]1μV/e-
Conversion Gain [MG]16μV/e-
Conversion Gain [HG]53.3μV/e-
Full-Well Charge [LG; No Corresponding Explanation for *1 in Source Table]1.9Me-
Full-Well Charge [MG; No Corresponding Explanation for *1 in Source Table]118.75Ke-
Full-Well Charge [HG; No Corresponding Explanation for *1 in Source Table]33.75Ke-
Dark Current [0.1V;18℃]30fa@0.1V&18℃
Shutter ModeGlobal Shutter
Cooling Temperature Difference [Below Room Temperature]40℃ below Room Temperature
Power Supply MethodDC12V
Power Consumption [TEC OFF]8.4W
Power Consumption [TEC ON]16W
Operating Temperature-30~60℃
Storage Temperature-40~85℃
Humidity [Non-Condensing]20% ~ 80%, Non-Condensing
Dimensions68mm×68mm×89.8mm
Weight485g
Lens MountC-Mount

Applications

Semiconductor Wafer Inspection;Security Surveillance;Hyperspectral Imaging;Border/Coastal Defense;Remote-Sensing Multispectral Imaging;Plastic Sorting/Recycling;Material Sorting/Agricultural Inspection;Liquid-Level Detection/Industrial Inspection;NIR-II Fluorescence;Beam Profiling;Machine Vision;Art Inspection

Key Features

Domestic900–1700nm InGaAs Chip;Cooled/Uncooled Versions;Precise Control up to40℃ Below Room Temperature;900–1700nm Response;15um Pixels;Global Shutter;USB3/10GigE/CameraLink/Analog AV;14bit ADC;512MB;External IO Trigger;Field Firmware Update;OEM Development

Datasheet

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Supplier Information

Gh
Ghopto
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Shanxi Guohui Optoelectronic Technology Co., Ltd. was founded in 2011, located in Taiyuan High-tech Zone. The company is dedicated to R&D and industrialization of cutting-edge optoelectronic technologies. It possesses an international-standard 4-inch III-V compound semiconductor chip production line, and has independently developed and achieved engineering production of infrared focal plane array detectors and imaging systems that reach international advanced levels. Its products are applied in moisture and fill level detection, silicon-based semiconductor inspection, high-temperature imaging detection, plastic sorting, and more. Main businesses include chip foundry services, standard InGaAs focal plane detector manufacturing, and customized infrared device manufacturing.

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GHCT-SW1280-U3 / 10GigE / CL
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