NIR-V2304T Dual-Channel Photoelectric Switch
Specification Snapshot
Dimensions [Page 1 Independent Features, Not Mechanical Drawing]
5.65 mm × 4.0 mm × 6.5 mm
Light-Emitting Section Slit [Page 1 Independent Features; Slit 0.3mm]
0.8 mm
Forward Voltage Drop V_F [Electro-Optical Characteristics；Ta=25°C；Input；I_F=20mA]
min:1.0 V; typical:1.2 V; max:1.4 V
Peak Wavelength λ_P [Electro-Optical Characteristics；Ta=25°C；Input；I_F=15mA]
typical:940 nm
Dark Current I_CEO [Electro-Optical Characteristics；Ta=25°C；Output；E_v=0lx；V_CE=20V]
typical:1.0 nA; max:100 nA
Collector Current I_C [Electro-Optical Characteristics；Ta=25°C；Transmission；I_F=15mA；V_CE=5V]
min:0.3 mA; typical:0.7 mA
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Specifications
| Parameter | Value |
|---|---|
| Dimensions [Page 1 Independent Features, Not Mechanical Drawing] | 5.65 mm × 4.0 mm × 6.5 mm |
| Gap Spacing [Independent Features on Page 1] | 3.0 mm |
| Slit [Independent Features on Page 1; Emitting Section 0.8mm] | 0.3 mm |
| Light-Emitting Section Slit [Page 1 Independent Features; Slit 0.3mm] | 0.8 mm |
| Moisture Sensitivity Level [Page 1 Independent Features; MSL] | 1 |
| Forward Voltage Drop V_F [Electro-Optical Characteristics；Ta=25°C；Input；I_F=20mA] | min:1.0 V; typical:1.2 V; max:1.4 V |
| Reverse Current I_R [Electro-Optical Characteristics；Ta=25°C；Input；V_R=5V] | max:10 μA |
| Peak Wavelength λ_P [Electro-Optical Characteristics；Ta=25°C；Input；I_F=15mA] | typical:940 nm |
| Dark Current I_CEO [Electro-Optical Characteristics；Ta=25°C；Output；E_v=0lx；V_CE=20V] | typical:1.0 nA; max:100 nA |
| Collector Current I_C [Electro-Optical Characteristics；Ta=25°C；Transmission；I_F=15mA；V_CE=5V] | min:0.3 mA; typical:0.7 mA |
| Saturation Voltage V_CE(SAT) [Electro-Optical Characteristics；Ta=25°C；Transmission；I_C=0.05mA；I_F=15mA] | max:0.4 V |
| Rise Time tr [Electro-Optical Characteristics；Ta=25°C；Transmission；V_CE=5V；I_C=0.3mA；R_L=100Ω] | typical:20 μs; max:150 μs |
| Fall Time tf [Electro-Optical Characteristics；Ta=25°C；Transmission；V_CE=5V；I_C=0.3mA；R_L=100Ω] | typical:30 μs; max:150 μs |
| ESD Test HBM [Test result of ESD; 1 Discharge in Each Forward/Reverse Direction at Each Voltage] | ±500、±1000、±1500、±2000 |
| ESD Test CDM [Test result of ESD; 3 Discharges in Each Forward and Reverse Direction] | ±2000 V |
| Forward Current I_F [Maximum Ratings；Ta=25°C；Input] | 50 mA |
| Reverse Voltage V_R [Maximum Ratings；Ta=25°C；Input] | 6 V |
| Pulsed Forward Current I_FP [Maximum Ratings; Ta=25°C; Input; Period1ms; Maximum Pulse Width0.1ms] | 500 mA |
| Power Consumption P_D [Maximum Ratings；Ta=25°C；Input] | 75 mW |
| Collector Current I_C [Maximum Ratings；Ta=25°C；Output] | 20 mA |
| Collector-Emitter Voltage V_CEO [Maximum Ratings；Ta=25°C；Output] | 30 V |
| Emitter-Collector Voltage V_ECO [Maximum Ratings；Ta=25°C；Output] | 5 V |
| Collector Power Dissipation P_C [Maximum Ratings；Ta=25°C；Output] | 75 mW |
| Operating Temperature Topr. [Maximum Ratings；Ta=25°C] | -40~+105 °C |
| Storage Temperature Tstg. [Maximum Ratings；Ta=25°C] | -40~+105 °C |
| Soldering Temperature Tsol. [Maximum Ratings; Ta=25°C; Maximum Duration 5 Seconds] | 255±5 |
| Recommended Solder Paste Melting Point [Independent Solder Paste Text on Page 6] | 245~255 °C |
| Recommended Solder Paste Composition [Independent Solder Paste Text on Page 6] | Lead-Free / Pb-Free |
| Recommended Stencil Thickness [Page 6 Independent Text; Screen-Printing Process] | 0.12~0.2 mm |
| Quantity per Reel [Page 7 Independent 2000pcs/reel Text; Per Reel] | 2000 pcs |
| Carrier-Tape Material [Independent Note on Page 7] | Black Conductive Polystyrene (Source English: Black Conductive Polystyene) |
| Cover-Tape Material [Independent Note on Page 7] | Polyethylene |
Applications
Automotive Gearshift,Air-Conditioning and Volume Knobs;Printers;Motor Control;Ticket Vending Machines;Position Encoders;General Object-Presence/Motion Detection
Key Features
Surface-Mount,Highly Reliable/Long Life,Automotive AEC-Q102;Dual Optical Paths Detect Direction/Speed;Package5.65×4.0×6.5mm;Gap3.0mm;Slit0.3mm,Emitting Part0.8mm;RoHs;MSL1;Original Disk Advice:Gap1.8mm with Constant0.9mm Offset Is Best,64 Signal Cycles,Circumference64×3.6mm=230.4mm,Calculated Diameter Approx.73mm(Source Calls It a Weight Diameter);With0.6mm Transmission/0.5mm Blocking and64 Cycles,Disk Diameter Approx.22mm;Smaller Disks Supported but Cannot Meet High-Precision Output Use
Datasheet
Product Datasheet
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Supplier Information
Shanghai Enbi Technology Co., Ltd., founded in 2016, focuses on optoelectronic technology R&D and production. Based on optoelectronic semiconductor discrete devices, it integrates optics, MEMS, electronics, microelectronics, semiconductor optoelectronic IC technologies, covering components, optoelectronic ICs, sensor modules, with full capability from chip design to module mass production, holding independent IP and unique testing systems. The company has an excellent management team and skilled staff, rich industry experience, strong R&D, efficient mass production and strict quality control, providing high-performance, reliable, cost-effective products; for special applications, we offer optimal optoelectronic solutions and custom products. Since its establishment, the company insists on independent innovation, quality first, continuously launching innovative products widely used in industrial equipment, automotive electronics, laser ranging, healthcare, instrumentation, security monitoring, smart home, etc., with performance replacing high-end foreign brands. Enbi Technology actively deploys in IoT, intelligent society, AI, driving industry upgrades, aiming to become a high-end optoelectronic brand.
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