NE101F-15D
Phase-Array Module 150LPI. This modular product combines light-emitting and light-receiving devices in one package. It is suitable for high-volume applications with less stringent size and space requirements. It directly outputs digital signals for convenient use and offers high cost effectiveness. Common resolutions: 45LPI, 90LPI, 150LPI, 180LPI, 300LPI, 360LPI... PDF model-specific introduction: the NE101F-15D is a transmissive, incremental photoelectric encoder that combines an infrared point light source and a photoelectric integrated circuit, providing high-quality digital signal output.
Specification Snapshot
Resolution [Features on Page 1]
150 LPI
Forward Current I_F [Maximum Ratings;Ta=25°C;Emitter]
40 mA
Power Supply Voltage V_CC [Maximum Ratings;Ta=25°C;Detector]
7 V
Output Voltage V_OUT [Maximum Ratings;Ta=25°C;Detector]
V_CC
Output Current I_OUT [Maximum Ratings;Ta=25°C;Detector]
4 mA
Operating Temperature Topr. [Maximum Ratings;Ta=25°C;Coupled]
-20~+85 °C
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Overview
Phase-Array Module 150LPI. This modular product combines light-emitting and light-receiving devices in one package. It is suitable for high-volume applications with less stringent size and space requirements. It directly outputs digital signals for convenient use and offers high cost effectiveness. Common resolutions: 45LPI, 90LPI, 150LPI, 180LPI, 300LPI, 360LPI...
PDF model-specific introduction: the NE101F-15D is a transmissive, incremental photoelectric encoder that combines an infrared point light source and a photoelectric integrated circuit, providing high-quality digital signal output.
Specifications
| Parameter | Value |
|---|---|
| Spacing [Features on Page 1; Gap] | 2.0 mm |
| Resolution [Features on Page 1] | 150 LPI |
| Forward Current I_F [Maximum Ratings;Ta=25°C;Emitter] | 40 mA |
| Reverse Voltage V_R [Maximum Ratings;Ta=25°C;Emitter] | 5 V |
| Power Supply Voltage V_CC [Maximum Ratings;Ta=25°C;Detector] | 7 V |
| Output Voltage V_OUT [Maximum Ratings;Ta=25°C;Detector] | V_CC |
| Output Current I_OUT [Maximum Ratings;Ta=25°C;Detector] | 4 mA |
| Operating Temperature Topr. [Maximum Ratings;Ta=25°C;Coupled] | -20~+85 °C |
| Storage Temperature Tstg. [Maximum Ratings;Ta=25°C;Coupled] | -40~+85 °C |
| Soldering Temperature Tsol. [Maximum Ratings; Ta=25°C; Coupled; 1mm from Housing, Maximum 5 Seconds] | 260 °C |
| Forward Voltage Drop V_F [Electro-Optical Characteristics;Ta=25°C;Emitter;I_F=10mA] | typical:1.42 V |
| Reverse Current I_R [Electro-Optical Characteristics;Ta=25°C;Emitter;V_R=3V] | max:5 μA |
| Peak Wavelength λ_P [Electro-Optical Characteristics;Ta=25°C;Emitter;I_F=10mA] | typical:850 nm |
| Power Supply Voltage V_CC [Electro-Optical Characteristics;Ta=25°C;Detector] | min:2.7 V; typical:5 V; max:5.5 V |
| Power Supply Current I_CC [Electro-Optical Characteristics;Ta=25°C;Detector;V_CC=5V] | typical:3 mA |
| Phase Difference θ [Electro-Optical Characteristics; Ta=25°C; Coupled; I_F=10mA; V_CC=5V; *2 Test Setup on Page 3, *3 Waveform on Page 4] | min:60 deg; typical:90 deg; max:120 deg |
| Duty Cycle D [Electro-Optical Characteristics; Ta=25°C; Coupled; I_F=10mA; V_CC=5V; *2 Test Setup on Page 3, *3 Waveform on Page 4] | min:40 %; typical:50 %; max:60 % |
| High-Level Output Voltage V_OH [Electro-Optical Characteristics; Ta=25°C; Coupled; I_F=10mA; V_CC=5V; *2 Test Setup on Page 3, *3 Waveform on Page 4] | min:0.8×V_CC |
| Low-Level Output Voltage V_OL [Electro-Optical Characteristics; Ta=25°C; Coupled; I_F=10mA; V_CC=5V; *2 Test Setup on Page 3, *3 Waveform on Page 4] | max:0.4 V |
| Rise Time tr [Electro-Optical Characteristics; Ta=25°C; Coupled; I_F=10mA; V_CC=5V; *2 Test Setup on Page 3, *3 Waveform on Page 4] | typical:550 ns |
| Fall Time tf [Electro-Optical Characteristics; Ta=25°C; Coupled; I_F=10mA; V_CC=5V; *2 Test Setup on Page 3, *3 Waveform on Page 4] | typical:6 ns |
| Response Frequency f [Electro-Optical Characteristics; Ta=25°C; Coupled; I_F=10mA; V_CC=5V; *2 Test Setup on Page 3, *3 Waveform on Page 4] | max:60 KHz |
| Code-Track Ratio W_W/W_B [Recommended Stripe Characteristics on Page 5; Independent Technical Table; Window/Bar Ratio] | Typ:1.0 |
| Code-Track Length L_W [Recommended Stripe Characteristics on Page 5; Independent Technical Table; Window/Bar Length] | min:2.0 mm; max:4.0 mm |
| Transmission T [Recommended Stripe Characteristics on Page 5; Independent Technical Table; Transmission Area] | min:70 % |
| Transmission T [Recommended Stripe Characteristics on Page 5; Independent Technical Table; Shading Area] | max:10 % |
| Linear Density [Recommended Stripe Characteristics on Page 5; Independent Technical Table] | typical:150 LPI |
| Linear Density [Recommended Stripe Characteristics on Page 5; Independent Technical Table] | typical:5.91 lines/mm |
| Forward Current I_F [Recommended Operating Conditions on Page 5] | 2~20 mA |
| Power Supply Voltage V_CC [Recommended Operating Conditions on Page 5] | 5 V |
| External Pull-Up Resistor R_Aout,R_Bout [Recommended Operating Conditions on Page 5] | NC/10K |
Applications
OA Equipment; Industrial Sewing Machines; Textile Machines; Servo Systems
Key Features
Gap: 2.0mm
Digital signal output: A/B phase
Resolution: 150LPI
Datasheet
Product Datasheet
PDF
Supplier Information
Shanghai Enbi Technology Co., Ltd., founded in 2016, focuses on optoelectronic technology R&D and production. Based on optoelectronic semiconductor discrete devices, it integrates optics, MEMS, electronics, microelectronics, semiconductor optoelectronic IC technologies, covering components, optoelectronic ICs, sensor modules, with full capability from chip design to module mass production, holding independent IP and unique testing systems. The company has an excellent management team and skilled staff, rich industry experience, strong R&D, efficient mass production and strict quality control, providing high-performance, reliable, cost-effective products; for special applications, we offer optimal optoelectronic solutions and custom products. Since its establishment, the company insists on independent innovation, quality first, continuously launching innovative products widely used in industrial equipment, automotive electronics, laser ranging, healthcare, instrumentation, security monitoring, smart home, etc., with performance replacing high-end foreign brands. Enbi Technology actively deploys in IoT, intelligent society, AI, driving industry upgrades, aiming to become a high-end optoelectronic brand.
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